License: In Copyright Keyword: hexagonal boron nitride
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6 records found.

AcceptedManuscript_APL_2025_Sasama.pdf
Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor
Journal article
Creator
ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI
Keyword
diamond, field-effect transistors, hexagonal boron nitride
Date published
2025-10-06
Updated at
2025-10-21 16:06:02 +0900
AcceptedManuscript_Sasama_2024_APL24-AR-05220.pdf
Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator
Journal article
Creator
ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI
Keyword
Hydrogen-terminated diamond, Field-effect transistors, hexagonal boron nitride, Self-aligned gate electrode
Date published
2024-08-26
Updated at
2024-09-12 16:30:45 +0900
VHEforMDR.pdf
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Journal article
Creator
Takuya Iwasaki (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI ;
Yoshifumi Morita (author) (Search by this author)
;
Kenji Watanabe (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI ;
Takashi Taniguchi (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI
Keyword
bilayer graphene, hexagonal boron nitride, heterostructure, valley Hall effect
Date published
2024-02-08
Updated at
2025-01-10 16:31:45 +0900
[Vol. 78]New Diamond Transistor Exhibits High Hole Mobility_WPI-MANA.pdf
[Research Highlights Vol.78] New Diamond Transistor Exhibits High Hole Mobility
Magazine
Collection
Research Highlights
Creator
International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (Search by this author)
National Institute for Materials Science
Keyword
diamond, field-effect transistor, hexagonal boron nitride, mobility, hydrogen-terminated, wide bandgap, hBN, graphite, hBN/h-BN
Date published
2022-07-29
Updated at
2023-12-26 21:47:16 +0900
[Vol. 69]Direct Growth of Germanene Marks a Major Step for Electronic Device Fabrication_ WPI-MANA.pdf
[Research Highlights Vol.69] Direct Growth of Germanene Marks a Major Step for Electronic Device Fabrication
Magazine
Collection
Research Highlights
Creator
International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (Search by this author)
National Institute for Materials Science
Keyword
density functional theory, germanene, graphene, hexagonal boron nitride, Raman spectroscopy, van der Waals materials, Ag(111), silicene
Date published
2021-07-15
Updated at
2023-12-26 21:46:24 +0900
[Vol. 61]First Fabrication of fBBLG_hBN Superlattices_ WPI-MANA.pdf
[Research Highlights Vol.61] First Fabrication of fBBLG/hBN Superlattices
Magazine
Collection
Research Highlights
Creator
International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (Search by this author)
National Institute for Materials Science
Keyword
two-dimensional material, van der Waals heterostructure, graphene, hexagonal boron nitride, moiré superlattice, transport property
Date published
2020-08-26
Updated at
2023-12-26 21:47:57 +0900