ファイル種別: application/pdf キーワード: Ga2O3
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Nabatame_d-SiO2-Ga2O3 2026_ECS_J._Solid_State_Sci._Technol._15_064005.pdf
Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process
ジャーナル論文
著者
Toshihide Nabatame (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)
ORCID SAMURAI ;
Yoshihiro Irokawa (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID SAMURAI ;
Tomomi Sawada (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
;
Hiromi Miura (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
;
Manami Miyamoto (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
;
Takashi Onaya (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
ORCID ;
Yasuo Koide (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI ;
Kazuhito Tsukagoshi (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
ORCID SAMURAI
キーワード
Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress
刊行年月日
2026-06-01
更新時刻
2026-08-18 11:30:17 +0900
nohighlight_Si-K-Ga2O3_resubmit_2403011908_revYY.pdf
Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)
ジャーナル論文
著者
Yuhua Tsai (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
ORCID ;
Yusuke Hashimoto (author) (この著者で検索)
NAIST
;
ZeXu Sun (author) (この著者で検索)
NAIST
;
Takuya Moriki (author) (この著者で検索)
NAIST
;
Takashi Tadamura (author) (この著者で検索)
NAIST
;
Takahiro Nagata (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
ORCID SAMURAI ;
Piero Mazzolini (author) (この著者で検索)
University of Parma
;
Antonella Parisini (author) (この著者で検索)
University of Parma
;
Matteo Bosi (author) (この著者で検索)
IMEM-CNR
;
Luca Seravalli (author) (この著者で検索)
IMEM-CNR
;
Tomohiro Matsushita (author) (この著者で検索)
NAIST
;
Yoshiyuki Yamashita (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group
ORCID SAMURAI
キーワード
Ga2O3, κ-Ga2O3
刊行年月日
2024-04-03
更新時刻
2025-03-07 12:30:11 +0900
EB_alpha-GO_240422-2HQ(clean).pdf
Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
ジャーナル論文
著者
Yuichi Oshima (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID SAMURAI ;
Takashi Shinohe (author) (この著者で検索)
FLOSFIA INC.
キーワード
Ga2O3, dislocation, HVPE, ELO
刊行年月日
2025-05-19
更新時刻
2025-05-21 16:30:09 +0900
article.pdf
Tetramethylammonium hydroxide (TMAH) treatment of dry-etched trenches on (010) β-Ga2O3 to enhance trench profiles
ジャーナル論文
著者
ORCID SAMURAI
キーワード
Ga2O3, TMAH
刊行年月日
2026-02-01
更新時刻
2026-02-25 12:30:03 +0900
260206_ASGO_Letter_manuscript_v6.pdf
Lattice-matched (Al x Sc y Ga1− x − y )2O3/ β -Ga2O3 heterostructures with widely tunable bandgap
ジャーナル論文
著者
Kazuki Koreishi (author) (この著者で検索)
ORCID ; ORCID SAMURAI ;
Takuto Soma (author) (この著者で検索)
ORCID ;
Kohei Yoshimatsu (author) (この著者で検索)
ORCID ;
Akira Ohtomo (author) (この著者で検索)
ORCID
キーワード
Ga2O3, Wide bandgap, Bandgap engineering
刊行年月日
2026-07-06
更新時刻
2026-08-06 09:39:59 +0900
paper.pdf
Formation of near-vertical trenches and fins with flat {−201} sidewalls on (512) β-Ga 2 O 3 via TMAH wet etching
ジャーナル論文
著者
ORCID SAMURAI
キーワード
Ga2O3
刊行年月日
2026-12-31
更新時刻
2026-09-24 09:54:18 +0900
paper.pdf
Wet etching of (−102) β-Ga 2 O 3 with tetramethylammonium hydroxide (TMAH)
ジャーナル論文
著者
ORCID SAMURAI
キーワード
Ga2O3, wet etching, TMAH
刊行年月日
2026-12-31
更新時刻
2026-06-11 15:11:01 +0900
Rapid homoepitaxial growth of 011 -Ga2O3 by HCl-based halide vapor phase epitaxy.pdf
Rapid homoepitaxial growth of (011) β-Ga 2 O 3 by HCl-based halide vapor phase epitaxy
ジャーナル論文
著者
ORCID SAMURAI ; ORCID SAMURAI
キーワード
Ga2O3, HVPE
刊行年月日
2025-12-31
更新時刻
2025-11-28 08:30:04 +0900
paper_-112.pdf
HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (−112) β-Ga 2 O 3
ジャーナル論文
著者
ORCID SAMURAI ; ORCID SAMURAI
キーワード
Ga2O3, (−112), HVPE, HCl gas etching
刊行年月日
2026-12-31
更新時刻
2026-07-16 10:12:49 +0900
Oshima - 2026 - Step-and-terrace surface formation on (−112) β-Ga 2 O 3 via thermal annealing-annotated.pdf
Step-and-terrace surface formation on (−112) β-Ga 2 O 3 via thermal annealing
ジャーナル論文
著者
ORCID SAMURAI
キーワード
Ga2O3
刊行年月日
2026-09-15
更新時刻
2026-09-14 09:13:42 +0900
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