MDR: NIMS Materials Data Repository

ファイル種別: application/pdf キーワード: Ga2O3

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13 件のレコードが見つかりました。 1件目から10件目まで表示します。

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High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer

ジャーナル論文
著者: Qihao Zhang (author) (この著者で検索)

;

Jiangwei Liu (author) (この著者で検索)

https://orcid.org/0000-0003-2580-7401

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

;

Chunming Tu (author) (この著者で検索)

;

Dongyuan Zhai (author) (この著者で検索)

;

Min He (author) (この著者で検索)

;

Jiwu Lu (author) (この著者で検索)
キーワード: Ga2O3, Transistor
刊行年月日: 2023-01-03
更新時刻: 2025-01-04 16:30:50 +0900

Wet etching of (−102) β-Ga ₂ O ₃ with tetramethylammonium hydroxide (TMAH)

ジャーナル論文
著者: Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, wet etching, TMAH
刊行年月日: 2026-12-31
更新時刻: 2026-06-11 15:11:01 +0900

Oshima_2025_Appl._Phys._Express_18_116501-1.pdf

Fabrication of β -Ga ₂ O ₃ /air-gap structures on (010) β -Ga ₂ O ₃ by wet etching in tetramethylammonium hydroxide (TMAH)

ジャーナル論文
著者: Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, TMAH, wet etching, MEMS
刊行年月日: 2025-11-01
更新時刻: 2025-11-27 08:30:13 +0900

Near-vertical plasma-free HCl gas etching on (011) β-Ga₂O₃

ジャーナル論文
著者: Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

NIMS Researchers Directory SAMURAI

;

Yuichi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8293-4891

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, crystallographic etching, (011)
刊行年月日: 2025-01-01
更新時刻: 2026-01-24 15:43:35 +0900

Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches

ジャーナル論文
著者: Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

National Institute for Materials Science Research Center for Electronic and Optical Materials

NIMS Researchers Directory SAMURAI

;

Yuichi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8293-4891

National Institute for Materials Science Research Center for Electronic and Optical Materials

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, (-102), selective area growth, selective area etching
刊行年月日: 2024-01-22
更新時刻: 2025-01-25 12:30:12 +0900

Formation of near-vertical trenches and fins with flat {−201} sidewalls on (512) β-Ga ₂ O ₃ via TMAH wet etching

ジャーナル論文
著者: Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3
刊行年月日: 2026-12-31
更新時刻: 2026-09-24 09:54:18 +0900

Maruzane_2025_J._Phys._D__Appl._Phys._58_03LT02.pdf

Luminescence properties of dislocations in α-Ga₂O₃

ジャーナル論文
著者: Mugove Maruzane (author) (この著者で検索)

https://orcid.org/0009-0004-9207-0424 (unauthenticated)

;

Yuichi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8293-4891

NIMS Researchers Directory SAMURAI

;

Olha Makydonska (author) (この著者で検索)

https://orcid.org/0009-0008-5562-2137 (unauthenticated)

;

Paul R Edwards (author) (この著者で検索)

https://orcid.org/0000-0001-7671-7698 (unauthenticated)

;

Robert W Martin (author) (この著者で検索)

https://orcid.org/0000-0002-6119-764X (unauthenticated)

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Fabien C-P Massabuau (author) (この著者で検索)

https://orcid.org/0000-0003-1008-1652 (unauthenticated)
キーワード: Ga2O3, dislocation
刊行年月日: 2025-01-20
更新時刻: 2024-11-13 08:31:40 +0900

Nabatame_d-SiO2-Ga2O3 2026_ECS_J._Solid_State_Sci._Technol._15_064005.pdf

Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process

ジャーナル論文
著者: Toshihide Nabatame (author) (この著者で検索)

https://orcid.org/0000-0002-5973-0230

National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)

NIMS Researchers Directory SAMURAI

;

Yoshihiro Irokawa (author) (この著者で検索)

https://orcid.org/0000-0002-6531-4356

National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group

NIMS Researchers Directory SAMURAI

;

Tomomi Sawada (author) (この著者で検索)

National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group

;

Hiromi Miura (author) (この著者で検索)

National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group

;

Manami Miyamoto (author) (この著者で検索)

National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group

;

Takashi Onaya (author) (この著者で検索)

https://orcid.org/0000-0002-2710-8623 (unauthenticated)

National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group

;

Yasuo Koide (author) (この著者で検索)

https://orcid.org/0000-0001-8321-9822

National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group

NIMS Researchers Directory SAMURAI

;

Kazuhito Tsukagoshi (author) (この著者で検索)

https://orcid.org/0000-0001-9710-2692

National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress
刊行年月日: 2026-06-01
更新時刻: 2026-08-18 11:30:17 +0900

Mapping primary crystallographic planes in β -Ga ₂ O ₃ based on a pseudo-cubic oxygen sublattice

ジャーナル論文
著者: Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, fcc
刊行年月日: 2026-02-16
更新時刻: 2026-02-18 16:30:08 +0900