15 records found.
Uncovering crystal structure evolution via nanobeam X-ray diffraction with a continuity-driven machine learning approach
- Article
- Creator
-
Zhendong Wu
;
Tetsuya Tohei
;
Yusuke Hayashi
;
Shigeyoshi Usami
;
Masayuki Imanishi
;
Yusuke Mori
;
Junichi Takino
;
Kazushi Sumitani
;
Yasuhiko Imai
;
Shigeru Kimura
;
Akira Sakai
- Keyword
- GaN, nanoXRD, ML
- Date published
- 2026-02-15
- Updated at
- 2026-02-26 12:30:06 +0900
In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition
- Article
- Creator
-
Akihiro Shimada
;
Haruna Shiomi
;
Tetsuya Tohei
;
Yusuke Hayashi
;
Masaya Yamaguchi
;
Junpei Yamamoto
;
Takeaki Hamachi
;
Yasuhiko Imai
;
Kazushi Sumitani
;
Shigeru Kimura
;
Shota Kaneki
;
Tamotsu Hashizume
;
Akira Sakai
- Keyword
- GaN, HEMT, Strain, In situ
- Date published
- 2025-08-21
- Updated at
- 2025-08-23 08:30:23 +0900
Machine learning assisted nanobeam X-ray diffraction based analysis on hydride vapor-phase epitaxy GaN
- Article
- Creator
-
Zhendong Wu
;
Yusuke Hayashi
;
Tetsuya Tohei
;
Kazushi Sumitani
;
Yasuhiko Imai
;
Shigeru Kimura
;
Akira Sakai
- Keyword
- GaN, SPring-8, nanoXRD, Machine learning
- Date published
- 2025-08-01
- Updated at
- 2025-07-31 12:30:18 +0900
A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures
- Article
- Creator
-
Masahiro Hara
;
Toshihide Nabatame
;
Yoshihiro Irokawa
;
Tomomi Sawada
;
Manami Miyamoto
;
Hiromi Miura
;
Tsunenobu Kimoto
;
Yasuo Koide
- Keyword
- GaN
- Date published
- 2025-05-07
- Updated at
- 2025-05-08 12:30:16 +0900
Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface
- Article
- Creator
-
Takahiro Nagata
;
Asahiko Matsuda
;
Takashi Teramoto
;
Dominic Gerlach
;
Peng Shen
;
Shigenori Ueda
;
Takako Kimura
;
Christian Dussarrat
;
Toyohiro Chikyow
- Keyword
- gallium nitride, GaN, nitrosyl fluoride, FNO, HAXPES, defect passivation, fluorination
- Date published
- 2025-03-07
- Updated at
- 2025-03-26 17:26:31 +0900
Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction
- Article
- Creator
-
T. Hamachi
;
T. Tohei
;
Y. Hayashi
;
S. Usami
;
M. Imanishi
;
Y. Mori
;
K. Sumitani
;
Y. Imai
;
S. Kimura
;
A. Sakai
- Keyword
- GaN, Dislocation, SPring-8
- Date published
- 2024-06-14
- Updated at
- 2024-12-05 12:47:52 +0900
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process
- Article
- Creator
-
Yoshihiro Irokawa
;
Toshihide Nabatame
;
Tomomi Sawada
;
Manami Miyamoto
;
Hiromi Miura
;
Kazuhito Tsukagoshi
;
Yasuo Koide
- Keyword
- GaN
- Date published
- 2024-08-01
- Updated at
- 2024-09-02 12:30:27 +0900
Degradation of vertical GaN diodes during proton and xenon-ion irradiation
- Article
- Creator
-
Hironori Okumura
;
Yohei Ogawara
;
Manabu Togawa
;
Masaya Miyahara
;
Tadaaki Isobe
;
Kosuke Itabashi
;
Jiro Nishinaga
;
Masataka Imura
- Keyword
- GaN, Schottky barrier diode, MOCVD, Vertical-type PN junction diode, Radiation irradiations , Proton, Xe
- Date published
- 2023-06-01
- Updated at
- 2024-08-24 08:30:18 +0900
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
- Article
- Creator
-
Takayoshi Oshima
;
Masataka Imura
;
Yuichi Oshima
- Keyword
- GaN, AlInN, etching, positive bevel edge termination
- Date published
- 2024-08-01
- Updated at
- 2024-08-02 12:30:52 +0900
Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
- Article
- Creator
-
S. Yamada
;
A. Fujimoto
;
S. Yagi
;
H. Narui
;
E. Yamaguchi
;
Y. Imanaka
- Keyword
- GaN, Double Heterostructures, Hole gas, Magnetoresistance, Spin-Orbit coupling
- Date published
- 2024-06-24
- Updated at
- 2024-07-13 08:30:10 +0900