Emergence of superconductivity in Th 3 P 4 -type Sn 3 Se 4 and Ge 3 S 4 under high pressure synthesized by diamond anvil cell with boron-doped diamond electrodes
- Journal article
- Creator
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Ryo Matsumoto (author) (Search by this author)National Institute for Materials Science
;
Satoshi Nakano (author) (Search by this author)National Institute for Materials Science
;
Kensei Terashima (author) (Search by this author)National Institute for Materials Science
;
;Toru Shinmei (author) (Search by this author);Tetsuo Irifune (author) (Search by this author)Motoharu Imai (author) (Search by this author)National Institute for Materials Science
;
Yoshihiko Takano (author) (Search by this author)National Institute for Materials Science
- Keyword
- High pressure, superconductivity, diamond
- Date published
- 2026-12-31
- Updated at
- 2026-08-25 15:57:43 +0900
Device engineering for photocurrent detected magnetic resonance and scanning probes using solid-state spin defects
- Journal article
- Creator
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;Hiroki Morishita (author) (Search by this author)a Center for Science and Innovation in Spintronics, Tohoku University;Naoya Morioka (author) (Search by this author);Eikichi Kimura (author) (Search by this author);Keigo Arai (author) (Search by this author);Yuichi Yamazaki (author) (Search by this author);Toshu An (author) (Search by this author);Shigemi Mizukami (author) (Search by this author)Norikazu Mizuochi (author) (Search by this author)
- Keyword
- Solid-state quantum sensor, quantum spin, diamond, silicon carbide, photoelectrical detection, quantum scanning probe
- Date published
- 2026-12-31
- Updated at
- 2026-08-24 14:30:47 +0900
耐圧1.7 kV超のノーマリーオフ型ホウ素ドープダイヤモンド金属–酸化膜–半導体電界効果トランジスタ
- Journal article
- Creator
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劉 江偉 (author) (Search by this author)電子・光機能材料研究センター/光学材料分野/半導体欠陥制御グループ, 物質・材料研究機構
;
寺地 徳之 (author) (Search by this author)電子・光機能材料研究センター/光学材料分野/半導体欠陥制御グループ, 物質・材料研究機構
;
達 博 (author) (Search by this author)マテリアル基盤研究センター/先端解析分野/量子ビーム回折グループ, 物質・材料研究機構
;
小出 康夫 (author) (Search by this author)名城大学
- Keyword
- diamond
- Date published
- 2026-01-25
- Updated at
- 2026-07-21 17:18:19 +0900
Diamond-to-graphene by nickel-catalyzed solid-state transformation
- Journal article
- Creator
-
Xiaolu Yuan (author) (Search by this author)
https://orcid.org/0000-0002-8755-1539
(unauthenticated)
;
;Chunxia Chi (author) (Search by this author);Feitong Ren (author) (Search by this author);Jinlong Liu (author) (Search by this author);Junjun Wei (author) (Search by this author);Liangxian Chen (author) (Search by this author);Jiangwei Liu (author) (Search by this author);Wenrui Wang (author) (Search by this author);Xiao Dong (author) (Search by this author);Haitao Ye (author) (Search by this author);Jincheng Tong (author) (Search by this author)Chengming Li (author) (Search by this author)
- Keyword
- diamond
- Date published
- 2025-12-27
- Updated at
- 2026-07-14 11:04:26 +0900
Impact of doping profile on electrical performance of boron-doped diamond metal–oxide–semiconductor field-effect transistors
- Journal article
- Creator
-
J. Liu (author) (Search by this author)
;
T. Teraji (author) (Search by this author)
- Keyword
- diamond
- Date published
- 2026-07-14
- Updated at
- 2026-07-14 10:52:28 +0900
Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors
- Journal article
- Creator
-
Jiangwei Liu (author) (Search by this author)
- Keyword
- diamond
- Date published
- 2025-12-31
- Updated at
- 2025-10-31 12:30:17 +0900
Measuring the stress tensor in nitrogen-doped CVD diamond using solid-state quantum sensor
- Journal article
- Creator
-
T. Tsuji (author) (Search by this author)National Institute for Materials Science
;
;S. Harada (author) (Search by this author)T. Teraji (author) (Search by this author)National Institute for Materials Science
- Keyword
- diamond, stress, NV center, chemical vapor deposition
- Date published
- 2025-12-31
- Updated at
- 2025-10-28 12:30:35 +0900
Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor
- Journal article
- Creator
-
Yosuke Sasama (author) (Search by this author)
;
Takuya Iwasaki (author) (Search by this author)
;
Masataka Imura (author) (Search by this author)
;
Kenji Watanabe (author) (Search by this author)
;
Takashi Taniguchi (author) (Search by this author)
;
Yamaguchi Takahide (author) (Search by this author)
- Keyword
- diamond, field-effect transistors, hexagonal boron nitride
- Date published
- 2025-10-06
- Updated at
- 2025-10-21 16:06:02 +0900
Normally-off boron-doped diamond MOSFETs with a breakdown voltage over 1.7 kV
- Journal article
- Creator
-
J. Liu (author) (Search by this author)
;
T. Teraji (author) (Search by this author)
;
B. Da (author) (Search by this author)
;
Y. Koide (author) (Search by this author)
- Keyword
- diamond
- Date published
- 2025-07-28
- Updated at
- 2025-09-05 12:30:23 +0900
The first formation of ion tracks in diamond via MeV C60 ion irradiation
- Journal article
- Creator
-
Hiroshi Amekura (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Amorphous Material Group, National Institute for Materials Science
- Keyword
- C60, ion track, diamond, cluster ion, swift heavy ion
- Date published
- Updated at
- 2025-08-04 16:30:40 +0900