- Creative Commons BY Attribution 4.0 International (18)
- In Copyright (8)
- Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International (7)
- Creative Commons BY-NC Attribution-NonCommercial 4.0 International (1)
- Creative Commons BY-NC-SA Attribution-NonCommercial-ShareAlike 4.0 International (1)
35 records found.
Wet etching of (−102) β-Ga 2 O 3 with tetramethylammonium hydroxide (TMAH)
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, wet etching, TMAH
- Date published
- 2026-12-31
- Updated at
- 2026-06-11 15:11:01 +0900
High Schottky barrier formation in tilted-dipole PdCoO2/ β -Ga2O3 (001) interfaces
- Journal article
- Creator
-
Takayuki Harada (author) (Search by this author)
;
Takuro Nagai (author) (Search by this author)
;
Kohei Sasaki (author) (Search by this author)
https://orcid.org/0000-0002-8923-7703
(unauthenticated)
- Keyword
- Thin film, Ga2O3, Delafossite, Power devices, Schottky
- Date published
- 2026-06-01
- Updated at
- 2026-06-10 14:51:59 +0900
Tetramethylammonium hydroxide (TMAH) treatment of dry-etched trenches on (010) β-Ga2O3 to enhance trench profiles
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, TMAH
- Date published
- 2026-02-01
- Updated at
- 2026-02-25 12:30:03 +0900
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takayoshi Oshima (author) (Search by this author)
;
Shiyu Xiao (author) (Search by this author)
https://orcid.org/0009-0007-0382-0396
(unauthenticated)
;
;Kazuto Murakami (author) (Search by this author);Katsuhiro Imai (author) (Search by this author)Takahiro Tomita (author) (Search by this author)
- Keyword
- Ga2O3, HVPE, Cr2O3
- Date published
- 2026-02-21
- Updated at
- 2026-02-18 16:30:15 +0900
Mapping primary crystallographic planes in β -Ga 2 O 3 based on a pseudo-cubic oxygen sublattice
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, fcc
- Date published
- 2026-02-16
- Updated at
- 2026-02-18 16:30:08 +0900
First-principles lattice thermal conductivity calculation for Ga2O3 / C2/m (12) / materials id 886
- Dataset
- Collection
- MDR lattice thermal conductivity calculation database
- Creator
-
Atsushi Togo (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science
- Keyword
- Lattice thermal conductivity, Ga2O3
- Date published
- Updated at
- 2026-01-24 14:36:41 +0900
First-principles lattice thermal conductivity calculation for Ga2O3 / R-3c (167) / materials id 1243
- Dataset
- Collection
- MDR lattice thermal conductivity calculation database
- Creator
-
Atsushi Togo (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science
- Keyword
- Lattice thermal conductivity, Ga2O3
- Date published
- Updated at
- 2026-01-24 12:32:36 +0900
Rapid homoepitaxial growth of (011) β-Ga 2 O 3 by HCl-based halide vapor phase epitaxy
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, HVPE
- Date published
- 2025-12-31
- Updated at
- 2025-11-28 08:30:04 +0900
Fabrication of β -Ga 2 O 3 /air-gap structures on (010) β -Ga 2 O 3 by wet etching in tetramethylammonium hydroxide (TMAH)
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, TMAH, wet etching, MEMS
- Date published
- 2025-11-01
- Updated at
- 2025-11-27 08:30:13 +0900
HCl-gas etching of (001) β-Ga2O3 under oxygen supply
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
;
Takayoshi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
- Keyword
- Ga2O3, etching, plasma-free
- Date published
- 2025-12-31
- Updated at
- 2025-09-04 12:30:19 +0900