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The integration of high-κ films with two-dimensional (2D) semiconductors offers a pathway to advance metal-oxide-semiconductor technology scaling. While reliability studies on gate stacks with 2D semiconductors have focused on device performance instabilities, the stability of bulk dielectric properties, particularly for ultrathin high-κ films on 2D semiconductors, remains underexplored. This work demonstrates the scalability of high-κ Er2O3 on mechanically transferred MoS2, achieving an equivalent oxide thickness below 1 nm. However, the critical issue is identified: time-dependent degradation of the dielectric constant, which persists despite various passivation methods. Notably, this instability is absent when the high-κ film is deposited on a clean surface of MoS2 grown on a sapphire substrate, revealing that the degradation originates from suboptimal surface conditions of the 2D semiconductor rather than the dielectric itself. These findings highlight the necessity of addressing 2D material surface effects to fully realize the potential of ultrathin high-κ dielectrics in future device applications.

権利情報:

• In Copyright
  

  This document is the Accepted Manuscript version of a Published Article that appeared in final form in ACS Materials Letters, copyright © 2025 American Chemical Society. To access the final published article, see https://doi.org/10.1021/acsmaterialslett.5c00291.

キーワード: High-κ dielectric, MoS2, 2D semiconductor

刊行年月日: 2025-05-05

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Materials Letters (ISSN: 26394979) vol. 7 issue. 5 p. 1993-2001

研究助成金:

• JST-Mirai Program JPMJMI22708192
• Ministry of Education, Culture, Sports, Science and Technology JPMXP09F23UT1041
• Core Research for Evolutional Science and Technology JPMJCR24A3
• Japan Society for the Promotion of Science JP21H05232
• Japan Society for the Promotion of Science JP21H05236
• Japan Society for the Promotion of Science JP21H05237
• Japan Society for the Promotion of Science JP22H04957
• Japan Society for the Promotion of Science JP22K04212
• Japan Society for the Promotion of Science JP23K23243
• Japan Society for the Promotion of Science JP23K26745
• National Institute of Information and Communications Technology 05901

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1021/acsmaterialslett.5c00291

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更新時刻: 2026-07-29 11:45:27 +0900

MDRでの公開時刻: 2026-07-29 14:28:30 +0900