Journal article Reliability Challenges in Equivalent-Oxide-Thickness Scaling with High-κ Er2O3 Dielectrics on Two-Dimensional MoS2 Field-Effect Transistors
Shuhong Li (author) (Search by this author)
;
Ryotaro Otake (author) (Search by this author)
;
Tomonori Nishimura (author) (Search by this author)
;
Takashi Taniguchi (author) (Search by this author)
ORCID https://orcid.org/0000-0002-1467-3105
National Institute for Materials Science
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ORCID SAMURAI ;
Kenji Watanabe (author) (Search by this author)
ORCID https://orcid.org/0000-0003-3701-8119
National Institute for Materials Science
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ORCID SAMURAI ;
Yoshiki Sakuma (author) (Search by this author)
ORCID https://orcid.org/0000-0001-6804-7217
National Institute for Materials Science
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Kosuke Nagashio (author) (Search by this author)
2025A00686G_ACS materials letters.pdf
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Citation
Shuhong Li, Ryotaro Otake, Tomonori Nishimura, Takashi Taniguchi, Kenji Watanabe, Yoshiki Sakuma, Kosuke Nagashio. Reliability Challenges in Equivalent-Oxide-Thickness Scaling with High-κ Er2O3 Dielectrics on Two-Dimensional MoS2 Field-Effect Transistors. ACS Materials Letters. 2025, 7 (5), 1993-2001. https://doi.org/10.1021/acsmaterialslett.5c00291

Description:

(abstract)

The integration of high-κ films with two-dimensional (2D) semiconductors offers a pathway to advance metal-oxide-semiconductor technology scaling. While reliability studies on gate stacks with 2D semiconductors have focused on device performance instabilities, the stability of bulk dielectric properties, particularly for ultrathin high-κ films on 2D semiconductors, remains underexplored. This work demonstrates the scalability of high-κ Er2O3 on mechanically transferred MoS2, achieving an equivalent oxide thickness below 1 nm. However, the critical issue is identified: time-dependent degradation of the dielectric constant, which persists despite various passivation methods. Notably, this instability is absent when the high-κ film is deposited on a clean surface of MoS2 grown on a sapphire substrate, revealing that the degradation originates from suboptimal surface conditions of the 2D semiconductor rather than the dielectric itself. These findings highlight the necessity of addressing 2D material surface effects to fully realize the potential of ultrathin high-κ dielectrics in future device applications.

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Keyword: High-κ dielectric, MoS2, 2D semiconductor

Date published: 2025-05-05

Publisher: American Chemical Society (ACS)

Journal:

  • ACS Materials Letters (ISSN: 26394979) vol. 7 issue. 5 p. 1993-2001

Funding:

  • JST-Mirai Program JPMJMI22708192
  • Ministry of Education, Culture, Sports, Science and Technology JPMXP09F23UT1041
  • Core Research for Evolutional Science and Technology JPMJCR24A3
  • Japan Society for the Promotion of Science JP21H05232
  • Japan Society for the Promotion of Science JP21H05236
  • Japan Society for the Promotion of Science JP21H05237
  • Japan Society for the Promotion of Science JP22H04957
  • Japan Society for the Promotion of Science JP22K04212
  • Japan Society for the Promotion of Science JP23K23243
  • Japan Society for the Promotion of Science JP23K26745
  • National Institute of Information and Communications Technology 05901

Manuscript type: Author's version (Accepted manuscript)

MDR DOI:

First published URL: https://doi.org/10.1021/acsmaterialslett.5c00291

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Updated at: 2026-07-29 11:45:27 +0900

Published on MDR: 2026-07-29 14:28:30 +0900

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