Index Catalog // MDR

1. Phase transitions and slow spin dynamics of slightly inverted A-site spinel CoAl2−xGaxO4

Description/Abstract:: We report the properties of an A-site spinel magnet, CoAl2−xGaxO4, and analyze its anomalous, low-temperature magnetic behavior, which is...
Keyword:: magnetic frustration, magnetic phase diagram, quantum critical point, and thermoremanent magnetization
Resource Type:: Article
Author:: T Naka, J Valenta, T Nakane, S Ishii, M Nakayama, H Mamiya, K Takehana, N Tsujii, Y Imanaka, Y Matsushita, H Abe, T Uchikoshi, and H Yusa
Journal:: JOURNAL OF PHYSICS-CONDENSED MATTER
Date Uploaded:: 25/12/2023

2. Composition determination of beta-(AlxGa1-x)2O3 layers coherently grown on (010) beta-Ga2O3 substrates by high-resolution x-ray diffraction

Description/Abstract:: We demonstrate x-ray diffraction based composition estimation of b-(AlxGa1-x)2O3 coherently grown on (010) b-Ga2O3. The relation between ...
Keyword:: atom probe, composition, and β-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Elaheh Ahmadi, Stefan C. Badescu, Feng Wu, and James S. Speck
Journal:: APPLIED PHYSICS EXPRESS
Date Uploaded:: 11/01/2024
Date Modified:: 24/01/2024

3. Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography

Description/Abstract:: β-Ga2O3 has not been patterned using backside-exposure lithography, despite its high potential applications in future power electronics a...
Keyword:: Ga2O3 and lithography
Resource Type:: Article
Author:: Takayoshi Oshima
Journal:: JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 17/01/2024
Date Modified:: 24/01/2024

4. Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth

Description/Abstract:: We demonstrated the double layered epitaxial lateral overgrowth (ELO) of α-Ga2O3 by halide vapor phase epitaxy. Patterned masks were prep...
Keyword:: ELO, dislocation, and α-Ga2O3
Resource Type:: Article
Author:: Katsuaki Kawara, Yuichi Oshima, Mitsuru Okigawa, and Takashi Shinohe
Journal:: Applied Physics Express
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

5. Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

Description/Abstract:: We investigated the effect of mask materials on the epitaxial lateral overgrowth (ELO) characteristics of alpha-Ga2O3 and developed an EL...
Keyword:: ELO, HVPE, and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, and Takashi Shinohe
Journal:: JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

6. In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism

Description/Abstract:: The present work demonstrates a new technique to solve the in-plane rotational domain problem. In the technique, κ-Ga2O3 was grown by epi...
Keyword:: ELO, HVPE, domain, ε-Ga2O3, and κ-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, and Takashi Shinohe
Journal:: JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

7. Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy

Description/Abstract:: We investigated the growth characteristics of homoepitaxial (001) b-Ga2O3 by plasma-assisted molecular beam epitaxy.
Keyword:: MBE and β-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Elaheh Ahmadi, Stephen Kaun, Feng Wu, and James S Speck
Journal:: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

8. Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties

Description/Abstract:: We investigated the effect of supply conditions of GaCl, O2, and additional HCl on the growth rate of (0001) alpha-Ga2O3 by halide vapor ...
Keyword:: HVPE and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, and Takashi Shinohe
Journal:: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

9. Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates

Description/Abstract:: The halide vapor phase epitaxy of a-Ga2O3 is demonstrated for the first time. The films are twin-free, heteroepitaxially grown on sapphir...
Keyword:: HVPE and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Encarnación G. Víllora, and Kiyoshi Shimamura
Journal:: APPLIED PHYSICS EXPRESS
Date Uploaded:: 22/01/2024
Date Modified:: 22/01/2024

10. Quantitative characterization of built-in potential profile across GaAs p–n junctions using Kelvin probe force microscopy with qPlus sensor AFM

Description/Abstract:: The electrostatic potential distribution in materials and devices plays an important role in controlling the behaviors of charge carriers...
Keyword:: GaAs(110), Kelvin probe force microscopy, p-n junction, and qPlus sensor
Resource Type:: Article
Author:: Nobuyuki Ishida and Takaaki Mano
Journal:: Nanotechnology
Date Uploaded:: 03/04/2024

1. Phase transitions and slow spin dynamics of slightly inverted A-site spinel CoAl2−xGaxO4

2. Composition determination of beta-(AlxGa1-x)2O3 layers coherently grown on (010) beta-Ga2O3 substrates by high-resolution x-ray diffraction

3. Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography

4. Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth

5. Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

6. In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism

7. Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy

8. Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties

9. Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates

10. Quantitative characterization of built-in potential profile across GaAs p–n junctions using Kelvin probe force microscopy with qPlus sensor AFM

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1. Phase transitions and slow spin dynamics of slightly inverted A-site spinel CoAl2−xGaxO4

2. Composition determination of beta-(AlxGa1-x)2O3 layers coherently grown on (010) beta-Ga2O3 substrates by high-resolution x-ray diffraction

3. Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography

4. Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth

5. Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

6. In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism

7. Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy

8. Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties

9. Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates

10. Quantitative characterization of built-in potential profile across GaAs p–n junctions using Kelvin probe force microscopy with qPlus sensor AFM

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