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Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)
Materials issues and devices of α- and β-Ga2O3
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire
Fabrication of coherent γ-Al2O3/Ga2O3 superlattices on MgAl2O4 substrates
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Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
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Takayoshi Oshima
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Yuichi Oshima
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Masaki Takeguchi
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Masataka Imura
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Yoshiko Nakayama
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Japan Atomic Energy Agency
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