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Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)

Description/Abstract:

Snドープ β-Ga2O3(001)のドーパントの原子位置を光電子ホログラフィ法により明らかにした。

Keyword:

Ga2O3, b-Ga2O3, and dopant

Resource Type:

Article

Author:

Yuhua Tsai, Masaaki Kobata, Tatsuo Fukuda, Hajime Tanida, Toru Kobayashi, and Yoshiyuki Yamashita

Journal:

Applied Physics Letters

Date Uploaded:

19/03/2024
Materials issues and devices of α- and β-Ga2O3

Description/Abstract:

パワーデバイスに向けたα-　および β- Ga2O3の材料およびデバイス開発の最新状況を概観する。

Keyword:

Ga2O3, epitaxy, and power device

Resource Type:

Article

Author:

Elaheh Ahmadi and Yuichi Oshima

Journal:

JOURNAL OF APPLIED PHYSICS

Date Uploaded:

29/01/2024

Date Modified:

01/02/2024
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas

Description/Abstract:

In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The et...

Keyword:

Ga2O3, HCl, and etching

Resource Type:

Article

Author:

Takayoshi Oshima and Yuichi Oshima

Journal:

APPLIED PHYSICS LETTERS

Date Uploaded:

21/11/2023

Date Modified:

27/11/2023