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Transport evidence for twin-boundary pinning of superconducting vortices in FeSe
Description/Abstract:
We provide bulk transport evidence for twin-boundary pinning of vortices in FeSe. We measure interlayer resistance in FeSe in magnetic fi...
Keyword:
FeSe
,
iron-based superconductor
,
twin boundary
, and
vortex pinning
Resource Type:
Article
Author:
Taichi Terashima
,
Hideaki Fujii
,
Yoshitaka Matsushita
,
Shinya Uji
,
Yuji Matsuda
,
Takasada Shibauchi
, and
Shigeru Kasahara
Journal:
Physical Review B
Date Uploaded:
31/01/2024
Date Modified:
31/01/2024
Phonon Lifetime Observation in Epitaxial ScN Film with Inelastic X-Ray Scattering Spectroscopy
Description/Abstract:
Phonon-phonon scattering dominates the thermal properties in nonmetallic materials, and it directly influences device performance in appl...
Keyword:
ScN
and
phonon
Resource Type:
Article
Author:
H. Uchiyama
,
Y. Oshima
,
R. Patterson
,
S. Iwamoto
,
J. Shiomi
, and
K. Shimamura
Journal:
PHYSICAL REVIEW LETTERS
Date Uploaded:
31/01/2024
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10>
Description/Abstract:
We demonstrated the epitaxial lateral overgrowth of (-1012) (r-plane) α-Ga2O3 using striped mask pattern along <-12-10>. α-Ga2O3 st...
Keyword:
ELO
,
HVPE
,
dislocation
, and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Shingo Yagyu
, and
Takashi Shinohe
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
30/01/2024
Date Modified:
01/02/2024
Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy
Description/Abstract:
The halide vapor phase epitaxy of e-Ga2O3 is demonstrated for the first time. The e-Ga2O3 films are grown on GaN (0001), AlN (0001), and ...
Keyword:
HVPE
,
ε-Ga2O3
, and
κ-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Encarnación G. Víllora
,
Yoshitaka Matsushita
,
Satoshi Yamamoto
, and
Kiyoshi Shimamura
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
30/01/2024
Date Modified:
01/02/2024
Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers
Description/Abstract:
ScClxとNH3との反応によるHVPEでScNを育成した。成長速度は、原料分圧の増大に伴って最初は増加するが、やがて減少に転じ、最大成長速度は5um/h程度であった。基板は種々試みたが、サファイア(10-12)と(10-10)を用いたときに単一配向のScN(100)および...
Keyword:
HVPE
and
ScN
Resource Type:
Article
Author:
Yuichi Oshima
,
Encarnación G. Víllora
, and
Kiyoshi Shimamura
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
30/01/2024
Date Modified:
01/02/2024
Rutile-type GexSn1−xO2 alloy layers lattice-matched to TiO2 substrates for device applications
Description/Abstract:
We report the characterization and application of mist-CVD-grown rutile-structured GexSn1−xO2 (x = ∼0.53) films lattice-matched to isostr...
Keyword:
GeO2
,
SnO2
, and
TiO2
Resource Type:
Article
Author:
Hitoshi Takane
,
Takayoshi Oshima
,
Takayuki Harada
,
Kentaro Kaneko
, and
Katsuhisa Tanaka
Journal:
Applied Physics Express
Date Uploaded:
30/01/2024
Date Modified:
01/02/2024
X線・中性子小角散乱法及び3次元アトムプローブ法による Cu-Ni-Si合金中のδNi2Si析出相の解析
Description/Abstract:
The strength of Cu-Ni-Si alloy can be improved by finely dispersing a Ni-Si-based compound as a precipitate into the Cu parent phase by h...
Keyword:
Corson alloy
,
atom probe tomography
, and
transmission electron microscopy
Resource Type:
Article
Author:
佐々木 宏和
,
秋谷 俊太
,
三原 邦照
,
大場 洋次郎
,
大沼 正人
,
埋橋 淳
, and
大久保 忠勝
Journal:
Journal of Japan Institute of Copper
Date Uploaded:
30/01/2024
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Description/Abstract:
We demonstrated epitaxial lateral overgrowth of a-Ga2O3 by halide vapor phase epitaxy. We formed stripe patterned or triangular lattice d...
Keyword:
ELO
,
HVPE
,
dislocation
, and
α-Ga2O3
Resource Type:
Article
Author:
Y. Oshima
,
K. Kawara
,
T. Shinohe
,
T. Hitora
,
M. Kasu
, and
S. Fujita
Journal:
APL MATERIALS
Date Uploaded:
29/01/2024
Date Modified:
01/02/2024
Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications
Description/Abstract:
パワー、およびUV応用を指向したα型酸化ガリウムの関連技術の現状と技術課題を俯瞰し、今後の展望を述べる。
Keyword:
epitaxy
,
power device
, and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
and
Elaheh Ahmadi
Journal:
APPLIED PHYSICS LETTERS
Date Uploaded:
29/01/2024
Date Modified:
01/02/2024
Materials issues and devices of α- and β-Ga2O3
Description/Abstract:
パワーデバイスに向けたα- および β- Ga2O3の材料およびデバイス開発の最新状況を概観する。
Keyword:
Ga2O3
,
epitaxy
, and
power device
Resource Type:
Article
Author:
Elaheh Ahmadi
and
Yuichi Oshima
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
29/01/2024
Date Modified:
01/02/2024
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608
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Research Highlights
80
MANA E-BULLETIN
15
The history of DICE and NIMS Digital Library
10
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IMFP
17
nanomechanical sensors
13
Spintronics
11
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Auger Depth Profiling Analysis
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529
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43
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266
Creative Commons BY Attribution 4.0 International
206
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43
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Material/Specimen
HfO2
2
InP/GaInAsP multilayer specimens
2
41 elemental solids (Li, Be, graphite, diamond, glassy C, Na, Mg, Al, Si, K, Sc, Ti, V, Cr, Fe, Co, Ni, Cu, Ge, Y, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Cs, Gd, Tb, Dy, Hf, Ta, W, Re, Os, Ir, Pt, Au, and Bi)
1
C (graphite), Si, Cr, Fe, Cu, Zn, Ga, Mo, Ag, Ta, W, Pt and Au
1
26-n-paraffin
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6
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4
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Creator
TODOROKI, Shin-ichi
12
轟 眞市
9
INOUE, Satoru
8
田邉 浩介
2
MATSUMOTO, T.
1
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»
Author
International Center for Materials Nanoarchitectonics (WPI-MANA)
95
Ikumu Watanabe
28
Tanuma, Shigeo
18
Kosuke Minami
17
Yuichi Oshima
16
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MOTEKI, Fuma
1
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http://rightsstatements.org/vocab/InC/1.0/
14
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7
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4
https://creativecommons.org/licenses/by-nc/4.0/
2
http://opensource.org/licenses/MIT
1
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Japan Society for the Promotion of Science
42
JSPS
39
JST
23
Japan Science and Technology Agency
14
JSPS KAKENHI
8
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Journal
Physical Review B
22
Journal of Surface Analysis
10
Science and Technology of Advanced Materials
10
Scientific Reports
10
Surface and Interface Analysis
10
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