Index Catalog // MDR

Start Over

Filtering by: Type of work Publication Keyword Ga2O3 Rights Statement Sim In Copyright

1. Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)

Description/Abstract:: Snドープ β-Ga2O3(001)のドーパントの原子位置を光電子ホログラフィ法により明らかにした。
Keyword:: Ga2O3, b-Ga2O3, and dopant
Resource Type:: Article
Author:: Yuhua Tsai, Masaaki Kobata, Tatsuo Fukuda, Hajime Tanida, Toru Kobayashi, and Yoshiyuki Yamashita
Journal:: Applied Physics Letters
Date Uploaded:: 19/03/2024

2. Halide Vapor Phase Epitaxy 2—Heteroepitaxial Growth of α- and ɛ-Ga2O3

Description/Abstract:: αおよびε酸化ガリウムのHVPE成長について解説する。
Keyword:: Ga2O3 and HVPE
Resource Type:: Book
Author:: 大島祐一
Journal:: Gallium Oxide: Crystal Growth, Materials Properties, and Devices (Springer)
Date Uploaded:: 30/01/2024

3. Materials issues and devices of α- and β-Ga2O3

Description/Abstract:: パワーデバイスに向けたα-　および β- Ga2O3の材料およびデバイス開発の最新状況を概観する。
Keyword:: Ga2O3, epitaxy, and power device
Resource Type:: Article
Author:: Elaheh Ahmadi and Yuichi Oshima
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 29/01/2024
Date Modified:: 01/02/2024

4. Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography

Description/Abstract:: β-Ga2O3 has not been patterned using backside-exposure lithography, despite its high potential applications in future power electronics a...
Keyword:: Ga2O3 and lithography
Resource Type:: Article
Author:: Takayoshi Oshima
Journal:: JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 17/01/2024
Date Modified:: 24/01/2024