Index Catalog // MDR

Description/Abstract:: The growth of Ce:(Lu1-xYx)2SiO5 single crystals by the hydrothermal technique is demonstrated. Crystallographic defects are suppressed th...
Keyword:: Hydrothermal crystal growth, Positron Emission Tomograpy, and Scintillator
Resource Type:: Article
Author:: Encarnación G. Víllora, Makoto Saito, and Kiyoshi Shimamura
Journal:: Applied Physics Express
Date Uploaded:: 25/12/2024

Description/Abstract:: Harmonic generation in wide bandgap semiconductors and dielectrics has attracted a surge of interest as a compact solid-state light sour...
Keyword:: Harmonic generation in wide bandgap semiconductors and β-Ga2O3
Resource Type:: Article
Author:: Mukhtar Hussain, André Mesquita Antunes, Gonçalo Vaz, Joana Alves, Hugo Pires, Tayyab Imran, Marco Peres, Katharina Lorenz, Encarnación Víllora, Kiyoshi Shimamura, Saibabu Madas, Mousumi Upadhyay Kahaly, Subhendu Kahaly, Gonçalo Figueira, Marta Fajardo, and Gareth Williams
Journal:: Optics Express
Date Uploaded:: 20/12/2024

Description/Abstract:: Ce:Li6Y(BO3)3 (LYBO) is a well-known candidate for thermal neutron detection with a very high Li concentration (3.06 × 1022 /cm3). So far...
Keyword:: Li-borates, Neutron detection, Scattering centers, Scintillators, and Single crystals
Resource Type:: Article
Author:: Dongsheng Yuan, Encarnación G. Víllora, Daisuke Nakauchi, Takumi Kato, Noriaki Kawaguchi, Takayuki Yanagida, and Kiyoshi Shimamura
Journal:: Applied Physics Express
Date Uploaded:: 21/08/2024

Description/Abstract:: The halide vapor phase epitaxy of e-Ga2O3 is demonstrated for the first time. The e-Ga2O3 films are grown on GaN (0001), AlN (0001), and ...
Keyword:: HVPE, ε-Ga2O3, and κ-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Encarnación G. Víllora, Yoshitaka Matsushita, Satoshi Yamamoto, and Kiyoshi Shimamura
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 30/01/2024
Date Modified:: 01/02/2024

Description/Abstract:: ScClxとNH3との反応によるHVPEでScNを育成した。成長速度は、原料分圧の増大に伴って最初は増加するが、やがて減少に転じ、最大成長速度は5um/h程度であった。基板は種々試みたが、サファイア(10-12)と(10-10)を用いたときに単一配向のScN(100)および...
Keyword:: HVPE and ScN
Resource Type:: Article
Author:: Yuichi Oshima, Encarnación G. Víllora, and Kiyoshi Shimamura
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 30/01/2024
Date Modified:: 01/02/2024

Description/Abstract:: The halide vapor phase epitaxy of a-Ga2O3 is demonstrated for the first time. The films are twin-free, heteroepitaxially grown on sapphir...
Keyword:: HVPE and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Encarnación G. Víllora, and Kiyoshi Shimamura
Journal:: APPLIED PHYSICS EXPRESS
Date Uploaded:: 22/01/2024
Date Modified:: 22/01/2024

Description/Abstract:: We demonstrate the high-speed growth of b-Ga2O3 epilayers on off-angled sapphire (0001) substrates by the halide vapor epitaxy. (-201) or...
Keyword:: heteroepitaxy and β-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Encarnaciόn G. Vίllora, and Kiyoshi Shimamura
Journal:: JOURNAL OF CRYSTAL GROWTH
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

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