GaN has attracted attention as a semiconductor material for next-generation power switching devices. Vertical-type GaN devices with MOS g...

The nanocrystalline structure and soft magnetic properties of melt-spun Fe-B-P-Cu ribbons are largely influenced by heating rates for cry...

We investigated the influence of the buffer material and a cryogenic temperature deposition process on the voltage-controlled magnetic an...

Ni-base superalloys are known for their high temperature oxidation resistance, however, impurity of S at ppm order can significantly dec...

The utilization of orbital transport provides a versatile and efficient spin manipulation mechanism. As interest in orbital-mediated spin...

The compositional and structural investigations of threading dislocations (TDs) in InGaN/GaN multiple quantum wells were carried out usin...

Behaviors of vacancy-type defects in ion-implanted GaN were studied by means of positron annihilation. Si or Mg ions were implanted into ...

We study the magnetic and electrical transport properties of magnetic tunnel junctions (MTJs) consisting of a Co3Mn/Mo/CoFeB multilayer p...

We used atomic-scale direct observations by transmission electron microscopy (TEM) and atom probe tomography to clarify the crystallograp...

Here, we investigate the effects of O2:N2 (1:1) as ambient gas as compared with pure N2 during activation annealing of Mg as p-type dopin...

An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; ...