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Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells

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The compositional and structural investigations of threading dislocations (TDs) in InGaN/GaN multiple quantum wells were carried out using correlative transmission electron microscopy (TEM) and atom probe tomography (APT). The correlative TEM/APT analysis on the same TD reveals that the indium atoms are diffused along the TD and its concentration decreases with distance from the InGaN layer. On the basis of the results, we directly observed that the indium atoms originating from the InGaN layer diffuse toward the epitaxial GaN surface through the TD, and it is considered to have occurred via the pipe diffusion mechanism induced by strain energy relaxation.

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Date published
  • 01/09/2022
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Journal
  • Title
    NANO LETTERS
    ISSN
    15306984
    Volume
    22
    Issue
    17
    Start page
    6930
    End page
    6935
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  • Accepted manuscript
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Last modified
  • 04/10/2023

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