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Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs
MDR Open Deposited
GaN has attracted attention as a semiconductor material for next-generation power switching devices. Vertical-type GaN devices with MOS gate driving are preferable for high-power switching applications. Due to recent advances in bulk GaN crystal growth, more studies are reporting vertical-type GaN devices with a breakdown voltage exceeding 1 kV on GaN substrates. However, these reports use an epitaxially grown p-type layer or fin-structure.
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- 12/07/2023
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- Author's original (Preprint)
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Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs.pdf | 773 KB | MDR Open |
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