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Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

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Behaviors of vacancy-type defects in ion-implanted GaN were studied by means of positron annihilation. Si or Mg ions were implanted into GaN to obtain 300-nm-deep box profiles of the impurities. The ion-implanted samples were annealed up to 1480°C under a N2 pressure of 1 GPa (ultra-high-pressure annealing: UHPA). For as-implanted GaN, the major defect species was identified as Ga-vacancy-type defects such as a divacancy (VGaVN). After annealing above 1000°C, vacancy clusters, such as (VGaVN)3, were introduced, and they were found to be remained even after 1480°C annealing. For Mg-implanted GaN with [Mg]=1018 cm-3, no large change in the depth distribution of Mg was observed before and after annealing at 1400°C. For the sample with [Mg]=1019 cm-3, however, Mg diffused into the bulk, which was attributed to the over-doping of Mg and their vacancy-assisted diffusion. The Mg diffusion was suppressed by sequential N-implantation, which was attributed to the reaction between Mg and vacancies under a N-rich condition. Interactions between vacancies, Mg, and H during UHPA were also discussed.

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  • 15/03/2023
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  • 04/10/2023
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    In Copyright 　　Copyright 2023 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited.
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    Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohokubo, Nobuyuki Ikarashi, Kazuhiro Hono, Tetsu Kachi, “Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam,” Proc. SPIE Volume 12421, Gallium Nitride Materials and Devices XVIII; 124210C (2023). https://doi.org/10.1117/12.2646233

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