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Filtering by: Author Elaheh Ahmadi Resource type Article Rights Statement Sim In Copyright

Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications

Description/Abstract:

パワー、およびUV応用を指向したα型酸化ガリウムの関連技術の現状と技術課題を俯瞰し、今後の展望を述べる。

Keyword:

epitaxy, power device, and α-Ga2O3

Resource Type:

Article

Author:

Yuichi Oshima and Elaheh Ahmadi

Journal:

APPLIED PHYSICS LETTERS

Date Uploaded:

29/01/2024

Date Modified:

01/02/2024
Materials issues and devices of α- and β-Ga2O3

Description/Abstract:

パワーデバイスに向けたα-　および β- Ga2O3の材料およびデバイス開発の最新状況を概観する。

Keyword:

Ga2O3, epitaxy, and power device

Resource Type:

Article

Author:

Elaheh Ahmadi and Yuichi Oshima

Journal:

JOURNAL OF APPLIED PHYSICS

Date Uploaded:

29/01/2024

Date Modified:

01/02/2024
Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy

Description/Abstract:

We investigated the growth characteristics of homoepitaxial (001) b-Ga2O3 by plasma-assisted molecular beam epitaxy.

Keyword:

MBE and β-Ga2O3

Resource Type:

Article

Author:

Yuichi Oshima, Elaheh Ahmadi, Stephen Kaun, Feng Wu, and James S Speck

Journal:

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Date Uploaded:

22/01/2024

Date Modified:

23/01/2024
Composition determination of beta-(AlxGa1-x)2O3 layers coherently grown on (010) beta-Ga2O3 substrates by high-resolution x-ray diffraction

Description/Abstract:

We demonstrate x-ray diffraction based composition estimation of b-(AlxGa1-x)2O3 coherently grown on (010) b-Ga2O3. The relation between ...

Keyword:

atom probe, composition, and β-Ga2O3

Resource Type:

Article

Author:

Yuichi Oshima, Elaheh Ahmadi, Stefan C. Badescu, Feng Wu, and James S. Speck

Journal:

APPLIED PHYSICS EXPRESS

Date Uploaded:

11/01/2024

Date Modified:

24/01/2024