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Yuichi Oshima
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IOP Publishing
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Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates
Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precur...
Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam...
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through ...
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral o...
Composition determination of beta-(AlxGa1-x)2O3 layers coherently grown on (010) beta-...
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
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HVPE
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α-Ga2O3
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ELO
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β-Ga2O3
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Ga2O3
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English
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IOP Publishing
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Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
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Author
Yuichi Oshima
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Katsuaki Kawara
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Takashi Shinohe
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Takayoshi Oshima
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Mitsuru Okigawa
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Journal
APPLIED PHYSICS EXPRESS
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Applied Physics Express
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JAPANESE JOURNAL OF APPLIED PHYSICS
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SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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