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Yuichi Oshima
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Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy
Description/Abstract:
We demonstrate that dislocation density in α-Ga2O3 epilayers is remarkably reduced via rapid growth at low temperatures by halide vapor p...
Keyword:
HVPE
,
dislocation
, and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Hiroyuki Ando
, and
Takashi Shinohe
Journal:
Applied Physics Express
Date Uploaded:
22/06/2024
Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
Description/Abstract:
We demonstrated the effectiveness of plasma-free HCl gas etching on a SiO2-masked (010) β-Ga2O3 substrate. The etching process proceeded ...
Keyword:
Ga2O3
and
HCl gas etching
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
Applied Physics Express
Date Uploaded:
14/06/2024
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
Description/Abstract:
In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The et...
Keyword:
Ga2O3
,
HCl
, and
etching
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
APPLIED PHYSICS LETTERS
Date Uploaded:
28/05/2024
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10>
Description/Abstract:
We demonstrated the epitaxial lateral overgrowth of (-1012) (r-plane) α-Ga2O3 using striped mask pattern along <-12-10>. α-Ga2O3 st...
Keyword:
ELO
,
HVPE
,
dislocation
, and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Shingo Yagyu
, and
Takashi Shinohe
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
30/01/2024
Date Modified:
01/02/2024
Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy
Description/Abstract:
The halide vapor phase epitaxy of e-Ga2O3 is demonstrated for the first time. The e-Ga2O3 films are grown on GaN (0001), AlN (0001), and ...
Keyword:
HVPE
,
ε-Ga2O3
, and
κ-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Encarnación G. Víllora
,
Yoshitaka Matsushita
,
Satoshi Yamamoto
, and
Kiyoshi Shimamura
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
30/01/2024
Date Modified:
01/02/2024
Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers
Description/Abstract:
ScClxとNH3との反応によるHVPEでScNを育成した。成長速度は、原料分圧の増大に伴って最初は増加するが、やがて減少に転じ、最大成長速度は5um/h程度であった。基板は種々試みたが、サファイア(10-12)と(10-10)を用いたときに単一配向のScN(100)および...
Keyword:
HVPE
and
ScN
Resource Type:
Article
Author:
Yuichi Oshima
,
Encarnación G. Víllora
, and
Kiyoshi Shimamura
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
30/01/2024
Date Modified:
01/02/2024
Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications
Description/Abstract:
パワー、およびUV応用を指向したα型酸化ガリウムの関連技術の現状と技術課題を俯瞰し、今後の展望を述べる。
Keyword:
epitaxy
,
power device
, and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
and
Elaheh Ahmadi
Journal:
APPLIED PHYSICS LETTERS
Date Uploaded:
29/01/2024
Date Modified:
01/02/2024
Materials issues and devices of α- and β-Ga2O3
Description/Abstract:
パワーデバイスに向けたα- および β- Ga2O3の材料およびデバイス開発の最新状況を概観する。
Keyword:
Ga2O3
,
epitaxy
, and
power device
Resource Type:
Article
Author:
Elaheh Ahmadi
and
Yuichi Oshima
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
29/01/2024
Date Modified:
01/02/2024
Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates
Description/Abstract:
The halide vapor phase epitaxy of a-Ga2O3 is demonstrated for the first time. The films are twin-free, heteroepitaxially grown on sapphir...
Keyword:
HVPE
and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Encarnación G. Víllora
, and
Kiyoshi Shimamura
Journal:
APPLIED PHYSICS EXPRESS
Date Uploaded:
22/01/2024
Date Modified:
22/01/2024
Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching
Description/Abstract:
Threading dislocations in a heteroepitaxial α-Ga2O3 film was visualized as etch pits on the surface. We found that etch pits were formed ...
Keyword:
dislocation
,
etching
, and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Shingo Yagyu
, and
Takashi Shinohe
Journal:
JOURNAL OF CRYSTAL GROWTH
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
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Yuichi Oshima
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