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Tanuma, Shigeo
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11.
試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析
Description/Abstract:
試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析について検討を行った.分析時の試料保持温度を常温および-190℃として,それぞれの温度について電子線電流密度を3段階に変えてデプスプロファイルを取得した.イオン加速電圧は3kVである.また,測定したオー...
Keyword:
Auger Depth Profiling Analysis
,
Sample Cooling Method
, and
SiO2/Si
Material/Specimen:
SiO2:103nm/Si-Substrate
Resource Type:
Article
Author:
Ogiwara, Toshiya
and
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
26/07/2021
Date Modified:
26/07/2021
12.
High-Sensitivity and High-Depth Resolution Auger Depth Profiling Using an Inclined Holder based on Geometric Characteristics of Auger Electron Spectroscopy Apparatus Equipped with Concentric Hemispherical Analyzer
Description/Abstract:
半球型電子分光器を搭載したオージェ電子分光装置では,傾斜ホルダーを用いると装置のジオ メトリー特性との関係からイオン及び一次電子の入射角の自由度が大きくなる.特に試料回転の 回転軸が一次電子の入射方向と一致する場合は,傾斜ホルダーの回転角によってイオン入射角を 設定でき,電...
Keyword:
Auger Depth Profiling Analysis
,
Inclined Holder
,
GaAs/AlAs Superlattice
, and
Si/Ge multiple delta-doped layers
Material/Specimen:
GaAs/AlAs Superlattice
and
Si/Ge multiple delta-doped layers
Resource Type:
Article
Author:
Ogiwara, Toshiya
,
Nagatomi, Takaharu
,
Kim, Kyung Joong
, and
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
14/06/2021
Date Modified:
18/06/2021
13.
Arイオンスパッタリングされた各種化合物半導体表面のSEM観察
Description/Abstract:
各種化合物半導体の表面をArイオンでスパッタリングして,その表面のSEM観察を行なった.そして,イオンスパッタリング時の試料温度および試料回転の有無と表面形状の関係を系統的に調べた.その結果,表面あれはスパッタリングされた表面全体に生成する場合とコーン状の突起物がランダムに...
Keyword:
compound semiconductor
,
surface observation using a scanning electron microscope
, and
argon ion sputtering
Material/Specimen:
InP
,
InSb
,
InAs
,
GaAs
,
GaSb
, and
GaP
Resource Type:
Article
Author:
Ogiwara, Toshiya
and
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
28/05/2021
Date Modified:
04/06/2021
14.
InP/GaInAsP多層膜におけるAES深さ分解能の温度依存性
Description/Abstract:
InP/GaInAsP多層膜を用いて,AES深さ方向分析における深さ分解能の試料温度依存性について検討を行なった.試料温度は,0〜50℃(10℃間隔)およびー120,−20℃の8条件としてデプスプロファイルを取得した.スパッタリング条件は,イオン種:Ar,イオン加速電圧:1...
Keyword:
InP/GaInAsP多層膜
,
Auger Depth Profiling Analysis
,
Depth Resolution
, and
Sample Temperature
Material/Specimen:
InP/GaInAsP Multilayer Film
Resource Type:
Article
Author:
Ogiwara, Toshiya
and
Tanuma, Shigeo
Journal:
Journal of Surface Analysis
Date Uploaded:
28/05/2021
Date Modified:
28/05/2021
15.
Calculations of Electron Inelastic Mean Free Paths. XI. Data for Liquid Water for Energies from 50 eV to 30 keV
Description/Abstract:
We calculated electron inelastic mean free paths (IMFPs) for liquid water from its optical energy-loss function (ELF) for electron energi...
Keyword:
EAL
,
Electron Inelastic Mean Free Path
,
IMFP
,
effective attenuation length
,
liquid water
,
relativistic TPP-2M
,
relativistic full Penn algorithm
, and
static structure factor
Resource Type:
Article
Author:
Shinotsuka, Hiroshi
,
Da, Bo
,
Tanuma, Shigeo
,
Yoshikawa, Hideki
,
Powell , Cedric J
, and
Penn, David R
Journal:
Surface and Interface Analysis
Date Uploaded:
31/07/2020
Date Modified:
02/07/2021
16.
電子線マイクロアナライザーによるMg-Ge合金の定量 -Mg Kαに対するGeの質量吸収係数の検討- and Electron microprobe analysis of Mg-Ge alloy -Examination of the mass absorption coefficient of Ge for MgKα–
Description/Abstract:
電子線マイクロアナライザーは広く材料の分析に用いられ,定量分析法はZAF法としてほぼ確立されている.しかし,Mg-Ge合金においては,定量分析の結果MgとGeの濃度の合計120wt.% と異常な値を示した.しかも電子線の加速電圧が高くなるに従ってMgの定量値が上昇する.こ...
Keyword:
Mg-Ge alloy
,
ZAF
,
electron probe microanalyzer
, and
mass absorption coefficient
Resource Type:
Article
Author:
Nishio, Mitsuaki
,
Imai, Motoharu
,
Tanuma, Shigeo
,
Yoshikawa, HIdeki
, and
Isoda, Yukihiro
Journal:
Journal of Surface Analysis
Date Uploaded:
20/07/2020
Date Modified:
22/07/2020
17.
Calculations of Mean Escape Depths of Photoelectrons in Elemental Solids Excited by Linearly Polarized X-rays for High-Energy Photoelectron Spectroscopy
Description/Abstract:
We have calculated mean escape depths (MEDs, D) of photoelectrons from Si, Cu, and Au excited by linearly polarized X-rays over the 50 to...
Keyword:
MED
,
asymmetry parameter
,
high-energy photoelectron spectroscopy
,
lnearly polarized X-rays
, and
mean escape depth
Resource Type:
Article
Author:
Tanuma, Shigeo
,
Yoshikawa, Hideki
,
Shinotsuka, Hiroshi
, and
Ueda, Ryuichi
Journal:
Journal of Electron Spectroscopy and Related Phenomena
Date Uploaded:
26/06/2020
Date Modified:
02/07/2021
18.
Calculations of electron inelastic mean free paths. XII. Data for 42 inorganic compounds over the 50 eV to 200 keV range with the full Penn algorithm
Description/Abstract:
We have calculated inelastic mean free paths (IMFPs) for 42 inorganic compounds (AgBr, AgCl, AgI, Al2O3, AlAs, AlN, AlSb, cubic BN, hexa...
Keyword:
Electron Inelastic Mean Free Path
,
IMFP
, and
TPP-2M
Resource Type:
Article
Author:
Shinotsuka, Hiroshi
,
Tanuma, Shigeo
,
Powell, Cedric J.
, and
Penn, Dave R.
Journal:
Surface and Interface Analysis
Date Uploaded:
26/06/2020
Date Modified:
08/07/2021
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Auger Depth Profiling Analysis
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9
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6
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8
Creative Commons BY-NC Attribution-NonCommercial 4.0 International
6
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4
Material/Specimen
C (graphite), Si, Cr, Fe, Cu, Zn, Ga, Mo, Ag, Ta, W, Pt and Au
1
26-n-paraffin
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1
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Tanuma, Shigeo
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7
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4
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3
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4
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Journal of Surface Analysis
6
SURFACE AND INTERFACE ANALYSIS
4
Surface and Interface Analysis
4
Journal of The Surface Science Society of Japan
2
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