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Jun Uzuhashi
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Robust Preparation of Sub‐20‐nm‐Thin Lamellae for Aberration‐Corrected Electron Micros...
Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs
Heating rate dependence of coercivity and microstructure of Fe–B–P–Cu nanocrystalline ...
Large voltage-controlled magnetic anisotropy effect in magnetic tunnel junctions prepa...
Effect of Ca Addition on the Oxidation Resistance of Ni–Al Alloy
Oxide layer dependent orbital torque efficiency in ferromagnet/Cu/oxide heterostructures
Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells
Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pr...
Large Tunneling Magnetoresistance in Perpendicularly Magnetized Magnetic Tunnel Juncti...
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implante...
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atom probe tomography
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gallium nitride
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scanning transmission electron microscopy
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transmission electron microscopy
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English
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AIP Publishing
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Creative Commons BY Attribution 4.0 International
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Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
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Author
Jun Uzuhashi
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Tadakatsu Ohkubo
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Kazuhiro Hono
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Hideki Sakurai
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Jun Suda
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Ministry of Education, Culture, Sports, Science and Technology
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JOURNAL OF APPLIED PHYSICS
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APL Materials
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Journal of Alloys and Compounds
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METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE
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