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Yuichi Oshima
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AIP Publishing
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Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10...
Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy
Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers
Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3...
Materials issues and devices of α- and β-Ga2O3
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HVPE
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Ga2O3
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epitaxy
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power device
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English
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AIP Publishing
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Creative Commons BY Attribution 4.0 International
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Author
Yuichi Oshima
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Elaheh Ahmadi
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Encarnación G. Víllora
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Kiyoshi Shimamura
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JOURNAL OF APPLIED PHYSICS
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APPLIED PHYSICS LETTERS
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