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Rutile-type GexSn1−xO2 alloy layers lattice-matched to TiO2 substrates for device applications
Description/Abstract:
We report the characterization and application of mist-CVD-grown rutile-structured GexSn1−xO2 (x = ∼0.53) films lattice-matched to isostr...
Keyword:
GeO2
,
SnO2
, and
TiO2
Resource Type:
Article
Author:
Hitoshi Takane
,
Takayoshi Oshima
,
Takayuki Harada
,
Kentaro Kaneko
, and
Katsuhisa Tanaka
Journal:
Applied Physics Express
Date Uploaded:
30/01/2024
Date Modified:
01/02/2024
In vitro analysis of insoluble salt formation mechanism associated with Mg corrosion—variations depending on the diffusion environment in model tissue
Description/Abstract:
Magnesium (Mg) alloys have attracted attention as biodegradable metals, but the details of their corrosion behavior under biological env...
Keyword:
Raman spectroscopy
,
corrosion
,
in vitro model tissue
,
insoluble salt precipitation
, and
magnesium
Resource Type:
Article
Author:
Masanobu Hayashi
,
Akiko Yamamoto
,
Takayuki Aizawa
,
Yu Yusa
,
Yoshinaka Shimizu
, and
Yoshimichi Imai
Journal:
Biomedical Materials
Date Uploaded:
24/01/2024
Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates
Description/Abstract:
The halide vapor phase epitaxy of a-Ga2O3 is demonstrated for the first time. The films are twin-free, heteroepitaxially grown on sapphir...
Keyword:
HVPE
and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Encarnación G. Víllora
, and
Kiyoshi Shimamura
Journal:
APPLIED PHYSICS EXPRESS
Date Uploaded:
22/01/2024
Date Modified:
22/01/2024
Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties
Description/Abstract:
We investigated the effect of supply conditions of GaCl, O2, and additional HCl on the growth rate of (0001) alpha-Ga2O3 by halide vapor ...
Keyword:
HVPE
and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Katsuaki Kawara
,
Takayoshi Oshima
,
Mitsuru Okigawa
, and
Takashi Shinohe
Journal:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy
Description/Abstract:
We investigated the growth characteristics of homoepitaxial (001) b-Ga2O3 by plasma-assisted molecular beam epitaxy.
Keyword:
MBE
and
β-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Elaheh Ahmadi
,
Stephen Kaun
,
Feng Wu
, and
James S Speck
Journal:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism
Description/Abstract:
The present work demonstrates a new technique to solve the in-plane rotational domain problem. In the technique, κ-Ga2O3 was grown by epi...
Keyword:
ELO
,
HVPE
,
domain
,
ε-Ga2O3
, and
κ-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Katsuaki Kawara
,
Takayoshi Oshima
, and
Takashi Shinohe
Journal:
JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Description/Abstract:
We investigated the effect of mask materials on the epitaxial lateral overgrowth (ELO) characteristics of alpha-Ga2O3 and developed an EL...
Keyword:
ELO
,
HVPE
, and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Katsuaki Kawara
,
Takayoshi Oshima
,
Mitsuru Okigawa
, and
Takashi Shinohe
Journal:
JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Elimination of threading dislocations in α-Ga2O3 by double layered epitaxial lateral overgrowth
Description/Abstract:
We demonstrated the double layered epitaxial lateral overgrowth (ELO) of α-Ga2O3 by halide vapor phase epitaxy. Patterned masks were prep...
Keyword:
ELO
,
dislocation
, and
α-Ga2O3
Resource Type:
Article
Author:
Katsuaki Kawara
,
Yuichi Oshima
,
Mitsuru Okigawa
, and
Takashi Shinohe
Journal:
Applied Physics Express
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography
Description/Abstract:
β-Ga2O3 has not been patterned using backside-exposure lithography, despite its high potential applications in future power electronics a...
Keyword:
Ga2O3
and
lithography
Resource Type:
Article
Author:
Takayoshi Oshima
Journal:
JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:
17/01/2024
Date Modified:
24/01/2024
Composition determination of beta-(AlxGa1-x)2O3 layers coherently grown on (010) beta-Ga2O3 substrates by high-resolution x-ray diffraction
Description/Abstract:
We demonstrate x-ray diffraction based composition estimation of b-(AlxGa1-x)2O3 coherently grown on (010) b-Ga2O3. The relation between ...
Keyword:
atom probe
,
composition
, and
β-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Elaheh Ahmadi
,
Stefan C. Badescu
,
Feng Wu
, and
James S. Speck
Journal:
APPLIED PHYSICS EXPRESS
Date Uploaded:
11/01/2024
Date Modified:
24/01/2024
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Applied Physics Express
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