Index Catalog // MDR

Description/Abstract:: We demonstrate the high-speed growth of b-Ga2O3 epilayers on off-angled sapphire (0001) substrates by the halide vapor epitaxy. (-201) or...
Keyword:: heteroepitaxy and β-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Encarnaciόn G. Vίllora, and Kiyoshi Shimamura
Journal:: JOURNAL OF CRYSTAL GROWTH
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

Description/Abstract:: We investigated the growth characteristics of homoepitaxial (001) b-Ga2O3 by plasma-assisted molecular beam epitaxy.
Keyword:: MBE and β-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Elaheh Ahmadi, Stephen Kaun, Feng Wu, and James S Speck
Journal:: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

Description/Abstract:: We demonstrate x-ray diffraction based composition estimation of b-(AlxGa1-x)2O3 coherently grown on (010) b-Ga2O3. The relation between ...
Keyword:: atom probe, composition, and β-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Elaheh Ahmadi, Stefan C. Badescu, Feng Wu, and James S. Speck
Journal:: APPLIED PHYSICS EXPRESS
Date Uploaded:: 11/01/2024
Date Modified:: 24/01/2024

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