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Filtering by: Keyword Ga2O3 Rights Statement Sim In Copyright

Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)

Description/Abstract:

Snドープ β-Ga2O3(001)のドーパントの原子位置を光電子ホログラフィ法により明らかにした。

Keyword:

Ga2O3, b-Ga2O3, and dopant

Resource Type:

Article

Author:

Yuhua Tsai, Masaaki Kobata, Tatsuo Fukuda, Hajime Tanida, Toru Kobayashi, and Yoshiyuki Yamashita

Journal:

Applied Physics Letters

Date Uploaded:

19/03/2024
Halide Vapor Phase Epitaxy 2—Heteroepitaxial Growth of α- and ɛ-Ga2O3

Description/Abstract:

αおよびε酸化ガリウムのHVPE成長について解説する。

Keyword:

Ga2O3 and HVPE

Resource Type:

Book

Author:

大島祐一

Journal:

Gallium Oxide: Crystal Growth, Materials Properties, and Devices (Springer)

Date Uploaded:

30/01/2024
Materials issues and devices of α- and β-Ga2O3

Description/Abstract:

パワーデバイスに向けたα-　および β- Ga2O3の材料およびデバイス開発の最新状況を概観する。

Keyword:

Ga2O3, epitaxy, and power device

Resource Type:

Article

Author:

Elaheh Ahmadi and Yuichi Oshima

Journal:

JOURNAL OF APPLIED PHYSICS

Date Uploaded:

29/01/2024

Date Modified:

01/02/2024
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography

Description/Abstract:

β-Ga2O3 has not been patterned using backside-exposure lithography, despite its high potential applications in future power electronics a...

Keyword:

Ga2O3 and lithography

Resource Type:

Article

Author:

Takayoshi Oshima

Journal:

JAPANESE JOURNAL OF APPLIED PHYSICS

Date Uploaded:

17/01/2024

Date Modified:

24/01/2024