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Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10...
Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy
Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers
Halide Vapor Phase Epitaxy 2—Heteroepitaxial Growth of α- and ɛ-Ga2O3
Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates
Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precur...
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through ...
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
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Yuichi Oshima
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Takashi Shinohe
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Katsuaki Kawara
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Kiyoshi Shimamura
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JOURNAL OF APPLIED PHYSICS
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JAPANESE JOURNAL OF APPLIED PHYSICS
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APPLIED PHYSICS EXPRESS
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Gallium Oxide: Crystal Growth, Materials Properties, and Devices (Springer)
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SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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