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Journal of Surface Analysis
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表面電子分光法における信号の減衰は如何に記述されるか? VI. 元素における双極子行列要素平方の計算とPenn algorithmによるIMFPの計算
べき乗則で解釈されるスペクトルの閾値及びべき乗数の自動解析方法
Estimation of Inelastic Mean Free Paths in Au and Cu from Their Elastic Peak Intensity...
表面電子分光法における信号の減衰はいかに記述されるか? II. 誘電関数とIMFP
English Translation of J. Surf. Anal. 24, 192-205(2018), Auger Depth Profiling Analysi...
InP/GaInAs多層膜のAES深さ方向分析のラウンドロビン試験報告(I)
High-Sensitivity and High-Depth Resolution Auger Depth Profiling Using an Inclined Hol...
Auger Depth Profiling Analysis of FeNi/CoFeB/FeNi Specimen Using an Ultra Low Angle In...
Arイオンスパッタリングされた各種化合物半導体表面のSEM観察
InP/GaInAsP多層膜におけるAES深さ分解能の温度依存性
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Auger Depth Profiling Analysis
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Ultra Low Angle Incidence Ion Beam
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IMFP
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一般社団法人 表面分析研究会
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FeNi/CoFeB/FeNi Thin Film
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Ogiwara, Toshiya
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Tanuma, Shigeo
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Yoshikawa, Hideki
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Nagata, Takahiro
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H. Yoshikawa
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Journal of Surface Analysis
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