2 records found. Displaying records 1 to 2.
Oxygen Defects and Instability in Very Thin a‐IGZO TFTs
- Journal article
- Creator
-
Hanjun Cho (author) (Search by this author)
https://orcid.org/0009-0009-2834-8846
(unauthenticated)
;
Masatake Tsuji (author) (Search by this author)
https://orcid.org/0000-0002-3404-6037
(unauthenticated)
;
Shigenori Ueda (author) (Search by this author)
;
Junghwan Kim (author) (Search by this author)
https://orcid.org/0000-0001-9168-6260
(unauthenticated)
;
Hideo Hosono (author) (Search by this author)
- Keyword
- a-IGZO, TFT, Oxygen defects, positive-bias-stress instability
- Date published
- 2025-07-07
- Updated at
- 2025-09-24 12:30:21 +0900
Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway
- Journal article
- Creator
-
Yuhao Shi (author) (Search by this author)
https://orcid.org/0000-0002-7956-193X
(unauthenticated)
;
Masatake Tsuji (author) (Search by this author)
https://orcid.org/0000-0002-3404-6037
(unauthenticated)
;
Hanjun Cho (author) (Search by this author)
https://orcid.org/0009-0009-2834-8846
(unauthenticated)
;
Shigenori Ueda (author) (Search by this author)National Institute for Materials Science
;
Junghwan Kim (author) (Search by this author)
https://orcid.org/0000-0001-9168-6260
(unauthenticated)
;
Hideo Hosono (author) (Search by this author)National Institute for Materials Science
- Keyword
- oxide semiconductors, IGZO, thin-film transistors, contact resistance, palladium, hydrogen
- Date published
- 2024-04-02
- Updated at
- 2024-04-08 16:30:22 +0900