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説明:

Amorphous oxide semiconductors (AOSs) with low off-currents and processing temperatures offer promising alternative materials for next-generation high-density memory devices. In this work, we report the pioneering use of palladium thin film as a high-efficiency active hydrogen transfer pathway from the outside to the internal contact interface via low-temperature post-annealing in the H2 atmosphere, and the formation of highly conductive metallic interlayer effectively solves the contact issues at the deep internal in devices. The application of this method reduced the contact resistance of Pd electrodes/amorphous indium-gallium-zinc oxide (a-IGZO) thin-film by 2 orders of magnitude, and thereby the mobility of thin-film transistor was increased from 3.2 cm2 V–1 s–1 to nearly 20 cm2 V–1 s–1, preserving an excellent bias stress stability. This technology has wide applicability for the solution of contact resistance issues in oxide semiconductor devices with complex architectures.

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• Creative Commons BY Attribution 4.0 International
  

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キーワード: oxide semiconductors, IGZO, thin-film transistors, contact resistance, palladium, hydrogen

刊行年月日: 2024-04-02

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Nano (ISSN: 19360851) vol. 18 issue. 13 p. 9736-9745

研究助成金:

• Samsung Electronics Co, Ltd.
• Ministry of Education, Culture, Sports, Science and Technology JPMXP1122683430

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acsnano.4c02101

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更新時刻: 2024-04-08 16:30:22 +0900

MDRでの公開時刻: 2024-04-08 16:30:22 +0900