- 2D semiconductors (1)
- Atomically precise fabrication (1)
- MoS2 transistors (1)
- NAND gate (1)
- Passivation layer (1)
- Transition metal dichalcogenides (1)
- Transition metal dichalcogenides (TMDs) (1)
- Two-dimensional (2D) semiconductors (1)
- Wafer-scale single-crystal growth (1)
- fluorinated graphene (1)
5 records found.
All-2D ReS2 transistors with split gates for logic circuitry
- Journal article
- Creator
-
;Junyoung Kwon (author) (Search by this author);Yongjun Shin (author) (Search by this author);Hyeokjae Kwon (author) (Search by this author);Jae Yoon Lee (author) (Search by this author);Hyunik Park (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
;Jihyun Kim (author) (Search by this author);Chul-Ho Lee (author) (Search by this author);Seongil Im (author) (Search by this author)Gwan-Hyoung Lee (author) (Search by this author) - Keyword
- 2D semiconductors, van der Waals heterostructure, NAND gate
- Date published
- 2019-07-17
- Updated at
- 2025-02-23 22:50:28 +0900
Fluorinated Graphene Contacts and Passivation Layer for MoS 2 Field Effect Transistors
- Journal article
- Creator
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;Huije Ryu (author) (Search by this author);Dong‐Hyun Kim (author) (Search by this author);Junyoung Kwon (author) (Search by this author);Sang Kyu Park (author) (Search by this author);Wanggon Lee (author) (Search by this author);Hyungtak Seo (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
;SunPhil Kim (author) (Search by this author);Arend M. van der Zande (author) (Search by this author);Jangyup Son (author) (Search by this author)Gwan‐Hyoung Lee (author) (Search by this author)
- Keyword
- Passivation layer, fluorinated graphene, MoS2 transistors
- Date published
- 2022-03-09
- Updated at
- 2025-02-26 08:30:36 +0900
Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
- Journal article
- Creator
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;Jangyup Son (author) (Search by this author)University of Illinois at Urbana-Champaign;Junyoung Kwon (author) (Search by this author)Yonsei University;SunPhil Kim (author) (Search by this author)University of Illinois at Urbana-Champaign;Yinchuan Lv (author) (Search by this author)University of Illinois at Urbana-Champaign;Jaehyung Yu (author) (Search by this author)University of Illinois at Urbana-Champaign;Jong-Young Lee (author) (Search by this author)Yonsei University;Huije Ryu (author) (Search by this author)Yonsei UniversityKenji Watanabe (author) (Search by this author)Research Center for Functional Materials/Electric and Electronic Materials Field/Electroceramics Group, National Institute for Materials Science
;
Takashi Taniguchi (author) (Search by this author)Research Center for Functional Materials/Exploring Function Field/High Pressure Group, National Institute for Materials Science
;
;Rita Garrido-Menacho (author) (Search by this author)University of Illinois at Urbana-Champaign;Nadya Mason (author) (Search by this author)University of Illinois at Urbana-Champaign;Elif Ertekin (author) (Search by this author)University of Illinois at Urbana-Champaign;Pinshane Y. Huang (author) (Search by this author)University of Illinois at Urbana-Champaign;Gwan-Hyoung Lee (author) (Search by this author)Yonsei UniversityArend van der Zande (author) (Search by this author)University of Illinois at Urbana-Champaign
- Keyword
- Atomically precise fabrication, graphene etch stop, nanoelectronics
- Date published
- 2018-09-28
- Updated at
- 2025-02-23 22:50:05 +0900
Electrically Confined Electroluminescence of Neutral Excitons in WSe2 Light‐Emitting Transistors
- Journal article
- Creator
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;June‐Chul Shin (author) (Search by this author);Jae Hwan Jeong (author) (Search by this author);Junyoung Kwon (author) (Search by this author);Yeon Ho Kim (author) (Search by this author);Bumho Kim (author) (Search by this author);Seung‐Je Woo (author) (Search by this author);Kie Young Woo (author) (Search by this author);Minhyun Cho (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
;Young Duck Kim (author) (Search by this author);Yong‐Hoon Cho (author) (Search by this author);Tae‐Woo Lee (author) (Search by this author);James Hone (author) (Search by this author);Chul‐Ho Lee (author) (Search by this author)Gwan‐Hyoung Lee (author) (Search by this author)
- Keyword
- Transition metal dichalcogenides, light-emitting devices, quantum efficiency
- Date published
- 2024-01-08
- Updated at
- 2025-07-30 16:30:26 +0900
Hypotaxy of wafer-scale single-crystal transition metal dichalcogenides
- Journal article
- Creator
-
;Donghoon Moon (author) (Search by this author);Wonsik Lee (author) (Search by this author);Chaesung Lim (author) (Search by this author);Jinwoo Kim (author) (Search by this author);Jiwoo Kim (author) (Search by this author);Yeonjoon Jung (author) (Search by this author);Hyun-Young Choi (author) (Search by this author);Won Seok Choi (author) (Search by this author);Hangyel Kim (author) (Search by this author);Ji-Hwan Baek (author) (Search by this author);Changheon Kim (author) (Search by this author);Jaewoong Joo (author) (Search by this author);Hyun-Geun Oh (author) (Search by this author);Hajung Jang (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
;Sukang Bae (author) (Search by this author);Jangyup Son (author) (Search by this author);Huije Ryu (author) (Search by this author);Junyoung Kwon (author) (Search by this author);Hyeonsik Cheong (author) (Search by this author);Jeong Woo Han (author) (Search by this author);Hyejin Jang (author) (Search by this author)Gwan-Hyoung Lee (author) (Search by this author) - Keyword
- Transition metal dichalcogenides (TMDs), Wafer-scale single-crystal growth, Two-dimensional (2D) semiconductors
- Date published
- 2025-02-27
- Updated at
- 2026-07-03 16:14:43 +0900