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説明:

Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides (TMDs) and black phosphorus, are the most promising channel materials for future electronics because of their unique electrical properties. Even though a number of 2Dmaterials-based logic devices have been demonstrated to date, most of them are a combination of more than two unit devices. If logic devices can be realized in a single channel, it would be advantageous for higher integration and functionality. In this study we report high-performance van der Waals heterostructure (vdW) ReS2 transistors with graphene electrodes on atomically flat hBN, and demonstrate a NAND gate comprising a single ReS2 transistor with split gates. Highly sensitive electrostatic doping of ReS2 enables fabrication of gate-tunable NAND logic gates, which cannot be achieved in bulk semiconductor materials because of the absence of gate tunability. The vdW heterostructure NAND gate comprising a single transistor paves a novel way to realize “all-2D” circuitry for flexible and transparent electronic applications.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: 2D semiconductors, van der Waals heterostructure, NAND gate

刊行年月日: 2019-07-17

出版者: Springer Science and Business Media LLC

掲載誌:

• Scientific Reports (ISSN: 20452322) vol. 9 issue. 1

研究助成金:

• National Research Foundation of Korea 2017R1A5A1014862
• National Research Foundation of Korea 2018M3D1A1058793
• National Research Foundation of Korea NRF-2017R1A2B2006568

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41598-019-46730-7

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更新時刻: 2025-02-23 22:50:28 +0900

MDRでの公開時刻: 2025-02-23 22:50:28 +0900