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We demonstrate the novel use of monolayer graphene as a highly selective etch mask in van der Waals (vdW) heterostructures and application in nanoelectronic and nanomechanical devices. With the exception of graphene, most 2D materials are etched through exposure to XeF2 gas. In contrast, graphene is fluorinated into highly resistive and gas impermeable fluorographene. By burying graphene within stacked heterostructures of other 2D materials, this unconventional etching selectivity allows one-step patterning of sophisticated devices within the heterostructures by using the graphene as one-atom-thick etch mask or etch stop. This technique enables atomic-precision in etch depth without precise control of etch time or process parameters, yet also works on chip-scale patterned arrays.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Atomically precise fabrication, graphene etch stop, nanoelectronics

刊行年月日: 2018-09-28

出版者: Springer Science and Business Media LLC

掲載誌:

• NATURE COMMUNICATIONS (ISSN: 20411723) vol. 9 3988

研究助成金:

• NSF | Directorate for Mathematical & Physical Sciences | Division of Materials Research 1720633
• National Research Foundation of Korea NRF-2017R1A2B2006568
• National Research Foundation of Korea 2017R1A5A1014862
• MEXT | NINS | Institute for Molecular Science JP15K21722

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41467-018-06524-3

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更新時刻: 2025-02-23 22:50:05 +0900

MDRでの公開時刻: 2025-02-23 22:50:05 +0900