MDR: NIMS Materials Data Repository

キーワード: Ga2O3

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17 件のレコードが見つかりました。 1件目から10件目まで表示します。

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Lattice-matched (Al x Sc y Ga1− x − y )2O3/ β -Ga2O3 heterostructures with widely tunable bandgap

ジャーナル論文
著者: Kazuki Koreishi (author) (この著者で検索)

https://orcid.org/0009-0000-1580-8262 (unauthenticated)

;

Kodai Niitsu (author) (この著者で検索)

https://orcid.org/0000-0002-0430-8868

NIMS Researchers Directory SAMURAI

;

Takuto Soma (author) (この著者で検索)

https://orcid.org/0000-0001-8685-9606 (unauthenticated)

;

Kohei Yoshimatsu (author) (この著者で検索)

https://orcid.org/0000-0001-9288-068X (unauthenticated)

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Akira Ohtomo (author) (この著者で検索)

https://orcid.org/0000-0003-0300-4712 (unauthenticated)
キーワード: Ga2O3, Wide bandgap, Bandgap engineering
刊行年月日: 2026-07-06
更新時刻: 2026-08-06 09:39:59 +0900

(110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown β- Ga ₂ O ₃ homoepitaxial layers on (011) substrates

ジャーナル論文
著者: Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

NIMS Researchers Directory SAMURAI

;

Yuichi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8293-4891

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, (011), AFM, TEM
刊行年月日: 2026-07-15
更新時刻: 2026-07-09 10:29:39 +0900

Rapid homoepitaxial growth of 011 -Ga2O3 by HCl-based halide vapor phase epitaxy.pdf

Rapid homoepitaxial growth of (011) β-Ga ₂ O ₃ by HCl-based halide vapor phase epitaxy

ジャーナル論文
著者: Yuichi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8293-4891

NIMS Researchers Directory SAMURAI

;

Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, HVPE
刊行年月日: 2025-12-31
更新時刻: 2025-11-28 08:30:04 +0900

High Schottky barrier formation in tilted-dipole PdCoO2/ β -Ga2O3 (001) interfaces

ジャーナル論文
著者: Takayuki Harada (author) (この著者で検索)

https://orcid.org/0000-0002-8657-2258

NIMS Researchers Directory SAMURAI

;

Takuro Nagai (author) (この著者で検索)

https://orcid.org/0000-0001-5239-3334

NIMS Researchers Directory SAMURAI

;

Kohei Sasaki (author) (この著者で検索)

https://orcid.org/0000-0002-8923-7703 (unauthenticated)
キーワード: Thin film, Ga2O3, Delafossite, Power devices, Schottky
刊行年月日: 2026-06-01
更新時刻: 2026-06-10 14:51:59 +0900

Tetramethylammonium hydroxide (TMAH) treatment of dry-etched trenches on (010) β-Ga2O3 to enhance trench profiles

ジャーナル論文
著者: Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, TMAH
刊行年月日: 2026-02-01
更新時刻: 2026-02-25 12:30:03 +0900

Nabatame_d-SiO2-Ga2O3 2026_ECS_J._Solid_State_Sci._Technol._15_064005.pdf

Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process

ジャーナル論文
著者: Toshihide Nabatame (author) (この著者で検索)

https://orcid.org/0000-0002-5973-0230

National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)

NIMS Researchers Directory SAMURAI

;

Yoshihiro Irokawa (author) (この著者で検索)

https://orcid.org/0000-0002-6531-4356

National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group

NIMS Researchers Directory SAMURAI

;

Tomomi Sawada (author) (この著者で検索)

National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group

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Hiromi Miura (author) (この著者で検索)

National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group

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Manami Miyamoto (author) (この著者で検索)

National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group

;

Takashi Onaya (author) (この著者で検索)

https://orcid.org/0000-0002-2710-8623 (unauthenticated)

National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group

;

Yasuo Koide (author) (この著者で検索)

https://orcid.org/0000-0001-8321-9822

National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group

NIMS Researchers Directory SAMURAI

;

Kazuhito Tsukagoshi (author) (この著者で検索)

https://orcid.org/0000-0001-9710-2692

National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress
刊行年月日: 2026-06-01
更新時刻: 2026-08-18 11:30:17 +0900