6 件のレコードが見つかりました。
Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
- ジャーナル論文
- 著者
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;Shigefusa F. Chichibu (author) (この著者で検索)Institute of Multidisciplinary Research for Advanced Materials, Tohoku University;Kohei Shima (author) (この著者で検索)Institute of Multidisciplinary Research for Advanced Materials, Tohoku University;Akira Uedono (author) (この著者で検索)Department of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;Shoji Ishibashi (author) (この著者で検索)AIST;Hiroko Iguchi (author) (この著者で検索)TOYOTA CENTRAL R&D LABS., INC.;Tetsuo Narita (author) (この著者で検索)TOYOTA CENTRAL R&D LABS., INC.;Keita Kataoka (author) (この著者で検索)TOYOTA CENTRAL R&D LABS., INC.;Ryo Tanaka (author) (この著者で検索)Fuji Electric Corporation;Shinya Takashima (author) (この著者で検索)Fuji Electric Corporation;Katsunori Ueno (author) (この著者で検索)Fuji Electric Corporation;Masaharu Edo (author) (この著者で検索)Fuji Electric Corporation;Hirotaka Watanabe (author) (この著者で検索)Institute of Materials and Systems for Sustainability, Nagoya University;Atsushi Tanaka (author) (この著者で検索)Institute of Materials and Systems for Sustainability, Nagoya University;Yoshio Honda (author) (この著者で検索)Institute of Materials and Systems for Sustainability, Nagoya University;Jun Suda (author) (この著者で検索)Institute of Materials and Systems for Sustainability, Nagoya University;Hiroshi Amano (author) (この著者で検索)Institute of Materials and Systems for Sustainability, Nagoya University;Tetsu Kachi (author) (この著者で検索)Institute of Materials and Systems for Sustainability, Nagoya UniversityToshihide Nabatame (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)
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Yoshihiro Irokawa (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
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Yasuo Koide (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
- キーワード
- GaN
- 刊行年月日
- 2024-05-14
- 更新時刻
- 2024-05-09 16:30:16 +0900
Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface
- ジャーナル論文
- 著者
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Takahiro Nagata (author) (この著者で検索)
;
Asahiko Matsuda (author) (この著者で検索)
;
Takashi Teramoto (author) (この著者で検索)
https://orcid.org/0000-0002-9368-1284
(unauthenticated)
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Dominic Gerlach (author) (この著者で検索)
https://orcid.org/0000-0003-1859-0750
(unauthenticated)
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Peng Shen (author) (この著者で検索)
https://orcid.org/0000-0002-1971-5490
(unauthenticated)
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Shigenori Ueda (author) (この著者で検索)
;
Takako Kimura (author) (この著者で検索)
https://orcid.org/0009-0007-0109-4482
(unauthenticated)
;
Christian Dussarrat (author) (この著者で検索)
https://orcid.org/0009-0000-1063-6473
(unauthenticated)
;
Toyohiro Chikyow (author) (この著者で検索)
- キーワード
- gallium nitride, GaN, nitrosyl fluoride, FNO, HAXPES, defect passivation, fluorination
- 刊行年月日
- 2025-03-07
- 更新時刻
- 2025-03-26 17:26:31 +0900
Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction
- ジャーナル論文
- 著者
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T. Hamachi (author) (この著者で検索)
https://orcid.org/0000-0002-0631-1729
(unauthenticated)
;
T. Tohei (author) (この著者で検索)
https://orcid.org/0000-0002-4113-2566
(unauthenticated)
;
Y. Hayashi (author) (この著者で検索)
;
S. Usami (author) (この著者で検索)
https://orcid.org/0000-0002-9710-1718
(unauthenticated)
;
;M. Imanishi (author) (この著者で検索);Y. Mori (author) (この著者で検索);K. Sumitani (author) (この著者で検索)Y. Imai (author) (この著者で検索)
https://orcid.org/0000-0003-4686-2629
(unauthenticated)
;
S. Kimura (author) (この著者で検索)
https://orcid.org/0000-0003-1064-7572
(unauthenticated)
;
A. Sakai (author) (この著者で検索)
https://orcid.org/0000-0002-0654-504X
(unauthenticated)
- キーワード
- GaN, Dislocation, SPring-8
- 刊行年月日
- 2024-06-14
- 更新時刻
- 2024-12-05 12:47:52 +0900
Degradation of vertical GaN diodes during proton and xenon-ion irradiation
- ジャーナル論文
- 著者
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;Hironori Okumura (author) (この著者で検索);Yohei Ogawara (author) (この著者で検索);Manabu Togawa (author) (この著者で検索);Masaya Miyahara (author) (この著者で検索);Tadaaki Isobe (author) (この著者で検索);Kosuke Itabashi (author) (この著者で検索);Jiro Nishinaga (author) (この著者で検索)Masataka Imura (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN, Schottky barrier diode, MOCVD, Vertical-type PN junction diode, Radiation irradiations , Proton, Xe
- 刊行年月日
- 2023-06-01
- 更新時刻
- 2024-08-24 08:30:18 +0900
Effect of surface vacancy defects on the phonon thermal transport across GaN/diamond interface
- ジャーナル論文
- 著者
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Kongping Wu (author) (この著者で検索)
https://orcid.org/0000-0001-5672-7610
(unauthenticated)
;
;Renxiang Cheng (author) (この著者で検索);Leng Zhang (author) (この著者で検索);Wenxiu Wang (author) (この著者で検索);Fangzhen Li (author) (この著者で検索)Meiyong Liao (author) (この著者で検索)
- キーワード
- diamond, heat spreader, GaN, calculation
- 刊行年月日
- 2024-12-19
- 更新時刻
- 2025-04-22 08:30:20 +0900
In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition
- ジャーナル論文
- 著者
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;Akihiro Shimada (author) (この著者で検索);Haruna Shiomi (author) (この著者で検索)Tetsuya Tohei (author) (この著者で検索)
https://orcid.org/0000-0002-4113-2566
(unauthenticated)
;
Yusuke Hayashi (author) (この著者で検索)
;
;Masaya Yamaguchi (author) (この著者で検索)Junpei Yamamoto (author) (この著者で検索)
https://orcid.org/0009-0007-5684-0569
(unauthenticated)
;
Takeaki Hamachi (author) (この著者で検索)
https://orcid.org/0000-0002-0631-1729
(unauthenticated)
;
Yasuhiko Imai (author) (この著者で検索)
https://orcid.org/0000-0003-4686-2629
(unauthenticated)
;
;Kazushi Sumitani (author) (この著者で検索)Shigeru Kimura (author) (この著者で検索)
https://orcid.org/0000-0003-1064-7572
(unauthenticated)
;
Shota Kaneki (author) (この著者で検索)
https://orcid.org/0000-0003-0806-8571
(unauthenticated)
;
Tamotsu Hashizume (author) (この著者で検索)
https://orcid.org/0009-0004-8229-9460
(unauthenticated)
;
Akira Sakai (author) (この著者で検索)
https://orcid.org/0000-0002-0654-504X
(unauthenticated)
- キーワード
- GaN, HEMT, Strain, In situ
- 刊行年月日
- 2025-08-21
- 更新時刻
- 2025-08-23 08:30:23 +0900