3 件のレコードが見つかりました。
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
- キーワード
- Ga2O3, (-102), selective area growth, selective area etching
- 刊行年月日
- 2024-01-22
- 更新時刻
- 2025-01-25 12:30:12 +0900
Luminescence properties of dislocations in α-Ga2O3
- ジャーナル論文
- 著者
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Mugove Maruzane (author) (この著者で検索)
https://orcid.org/0009-0004-9207-0424
(unauthenticated)
;
Yuichi Oshima (author) (この著者で検索)
;
Olha Makydonska (author) (この著者で検索)
https://orcid.org/0009-0008-5562-2137
(unauthenticated)
;
Paul R Edwards (author) (この著者で検索)
https://orcid.org/0000-0001-7671-7698
(unauthenticated)
;
Robert W Martin (author) (この著者で検索)
https://orcid.org/0000-0002-6119-764X
(unauthenticated)
;
Fabien C-P Massabuau (author) (この著者で検索)
https://orcid.org/0000-0003-1008-1652
(unauthenticated)
- キーワード
- Ga2O3, dislocation
- 刊行年月日
- 2025-01-20
- 更新時刻
- 2024-11-13 08:31:40 +0900
Materials issues and devices of α- and β-Ga2O3
- ジャーナル論文
- 著者
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;Elaheh Ahmadi (author) (この著者で検索)Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Ga2O3, power device, epitaxy
- 刊行年月日
- 2019-10-28
- 更新時刻
- 2024-01-29 15:08:11 +0900