Epitaxial lateral overgrowth of m -plane α-Ga 2 O 3 by halide vapor phase epitaxy
- ジャーナル論文
- 著者
-
Yuichi Oshima (author) (この著者で検索)
;
Takashi Shinohe (author) (この著者で検索)
https://orcid.org/0009-0000-5559-1432
(unauthenticated)
- キーワード
- Ga2O3, dislocation, ELO, HVPE
- 刊行年月日
- 2025-12-31
- 更新時刻
- 2025-04-23 12:30:12 +0900
Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells
- ジャーナル論文
- 著者
-
;Yudai Yamaguchi (author) (この著者で検索);Yuya Kanitani (author) (この著者で検索);Yoshihiro Kudo (author) (この著者で検索)Jun Uzuhashi (author) (この著者で検索)National Institute for Materials Science
;
Tadakatsu Ohkubo (author) (この著者で検索)National Institute for Materials Science
;
Kazuhiro Hono (author) (この著者で検索)National Institute for Materials Science
;
Shigetaka Tomiya (author) (この著者で検索)
- キーワード
- InGaN, dislocation, pipe diffusion, atom probe tomography, transmission electron microscopy
- 刊行年月日
- 2022-09-14
- 更新時刻
- 2024-01-05 22:12:51 +0900