キーワード: GaN
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15 件のレコードが見つかりました。

1-s2.0-S1369800125003439-main.pdf
A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures
ジャーナル論文
著者
Masahiro Hara (author) (この著者で検索)
ORCID ; ORCID SAMURAI ; ORCID SAMURAI ;
Tomomi Sawada (author) (この著者で検索)
;
Manami Miyamoto (author) (この著者で検索)
;
Hiromi Miura (author) (この著者で検索)
;
Tsunenobu Kimoto (author) (この著者で検索)
;
Yasuo Koide (author) (この著者で検索)
キーワード
GaN
刊行年月日
2025-05-07
更新時刻
2025-05-08 12:30:16 +0900
paper.pdf
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
ジャーナル論文
著者
Takayoshi Oshima (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID SAMURAI ;
Masataka Imura (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI ;
Yuichi Oshima (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID SAMURAI
キーワード
GaN, AlInN, etching, positive bevel edge termination
刊行年月日
2024-08-01
更新時刻
2024-08-02 12:30:52 +0900
Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_085003.pdf
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process
ジャーナル論文
著者
Yoshihiro Irokawa (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Toshihide Nabatame (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Tomomi Sawada (author) (この著者で検索)
National Institute for Materials Science
;
Manami Miyamoto (author) (この著者で検索)
;
Hiromi Miura (author) (この著者で検索)
;
Kazuhito Tsukagoshi (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Yasuo Koide (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
GaN
刊行年月日
2024-08-01
更新時刻
2024-09-02 12:30:27 +0900
Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_045002.pdf
Pt/GaN Schottky barrier height lowering by incorporated hydrogen
ジャーナル論文
著者
色川 芳宏 (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI ;
大井 暁彦 (author) (この著者で検索)
National Institute for Materials Science Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Nanofabrication Unit
ORCID SAMURAI ;
生田目 俊秀 (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Thin Film Electronics Group
ORCID SAMURAI ;
小出 康夫 (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI
キーワード
GaN, hydrogen, Schottky barrier height
刊行年月日
2024-04-01
更新時刻
2024-04-10 16:30:21 +0900
band_pdos.png
First-principles lattice thermal conductivity calculation for GaN / F-43m (216) / materials id 830
データセット
コレクション
MDR lattice thermal conductivity calculation database
著者
Atsushi Togo (author) (この著者で検索)
National Institute for Materials Science Center for Basic Research on Materials
ORCID SAMURAI
キーワード
Lattice thermal conductivity, GaN
刊行年月日
更新時刻
2026-01-24 12:32:02 +0900