15 件のレコードが見つかりました。
A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures
- ジャーナル論文
- 著者
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Masahiro Hara (author) (この著者で検索)
https://orcid.org/0000-0001-9748-8011
(unauthenticated)
;
Toshihide Nabatame (author) (この著者で検索)
;
Yoshihiro Irokawa (author) (この著者で検索)
;
;Tomomi Sawada (author) (この著者で検索);Manami Miyamoto (author) (この著者で検索);Hiromi Miura (author) (この著者で検索);Tsunenobu Kimoto (author) (この著者で検索)Yasuo Koide (author) (この著者で検索) - キーワード
- GaN
- 刊行年月日
- 2025-05-07
- 更新時刻
- 2025-05-08 12:30:16 +0900
Classification for transmission electron microscope images from different amorphous states using persistent homology
- ジャーナル論文
- 著者
-
Fumihiko Uesugi (author) (この著者で検索)National Institute for Materials Science
;
Masashi Ishii (author) (この著者で検索)National Institute for Materials Science
- キーワード
- TEM image simulation, GaN, persistent homology, Amorphous structure
- 刊行年月日
- 2022-06-06
- 更新時刻
- 2024-07-04 16:32:11 +0900
Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
- ジャーナル論文
- 著者
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S. Yamada (author) (この著者で検索)
https://orcid.org/0009-0004-5821-1078
(unauthenticated)
;
;A. Fujimoto (author) (この著者で検索)S. Yagi (author) (この著者で検索)
https://orcid.org/0000-0003-4490-6683
(unauthenticated)
;
H. Narui (author) (この著者で検索)
https://orcid.org/0000-0003-0803-5550
(unauthenticated)
;
;E. Yamaguchi (author) (この著者で検索)Y. Imanaka (author) (この著者で検索)
- キーワード
- GaN, Double Heterostructures, Hole gas, Magnetoresistance, Spin-Orbit coupling
- 刊行年月日
- 2024-06-24
- 更新時刻
- 2024-07-13 08:30:10 +0900
Effect of surface vacancy defects on the phonon thermal transport across GaN/diamond interface
- ジャーナル論文
- 著者
-
Kongping Wu (author) (この著者で検索)
https://orcid.org/0000-0001-5672-7610
(unauthenticated)
;
;Renxiang Cheng (author) (この著者で検索);Leng Zhang (author) (この著者で検索);Wenxiu Wang (author) (この著者で検索);Fangzhen Li (author) (この著者で検索)Meiyong Liao (author) (この著者で検索)
- キーワード
- diamond, heat spreader, GaN, calculation
- 刊行年月日
- 2024-12-19
- 更新時刻
- 2025-04-22 08:30:20 +0900
[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K
- 雑誌
- コレクション
- Research Highlights
- 著者
-
International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN, MEMS, NEMS, energy storage, temperature coefficient of frequency, AlN, Si, Strain
- 刊行年月日
- 2021-07-13
- 更新時刻
- 2023-12-26 21:38:08 +0900