6 件のレコードが見つかりました。
Epitaxial configuration of unidirectionally aligned MoS2 monolayer on sapphire
- ジャーナル論文
- 著者
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Akihiro Ohtake (author) (この著者で検索)
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Jun Nara (author) (この著者で検索)
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Yoshiki Sakuma (author) (この著者で検索)
- キーワード
- transition-metal dichalcogenide, low-energy electron diffraction, epitaxial growth
- 刊行年月日
- 2026-01-14
- 更新時刻
- 2026-01-14 13:07:15 +0900
Magnetic structures and magnetic anisotropy of Mn3−x Fe x Sn studied by first-principles calculations
- ジャーナル論文
- 著者
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;Katsunori Tagami (author) (この著者で検索)Takahisa Ohno (author) (この著者で検索)National Institute for Materials Science
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Jun Nara (author) (この著者で検索)National Institute for Materials Science
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Mamoru Usami (author) (この著者で検索)
- キーワード
- Mn3-xFexSn
- 刊行年月日
- 2024-02-29
- 更新時刻
- 2025-02-15 12:31:45 +0900
High-Throughput Computational Screening of Two-Dimensional Semiconductors
- ジャーナル論文
- 著者
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;Vei Wang (author) (この著者で検索)Xi’an University of Technology;Gang Tang (author) (この著者で検索)Beijing Institute of Technology;Ya-Chao Liu (author) (この著者で検索)Xi’an University of Technology;Ren-Tao Wang (author) (この著者で検索)Xi’an University of Technology;Hiroshi Mizuseki (author) (この著者で検索)Korea Institute of Science and Technology;Yoshiyuki Kawazoe (author) (この著者で検索)New Industry Creation Hatchery Center, Tohoku University, Sendai 980–8579, Japan;Jun Nara (author) (この著者で検索)National Institute for Materials Science International Center for Materials Nanoarchitectonics/Nano-Theory Field/First-Principles Simulation GroupWen Tong Geng (author) (この著者で検索)Hainan University
- キーワード
- DFT, 2D Materials
- 刊行年月日
- 2022-12-22
- 更新時刻
- 2023-12-25 15:17:40 +0900
Direct observation of atomic configuration of a highly oriented MoS2 film/α-Al2O3 (0001) using atomic resolution electron microscopy
- ジャーナル論文
- 著者
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;Emi Kano (author) (この著者で検索)Nagoya UniversityJun Nara (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Quantum Materials Simulation Group
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;Koki Takenaka (author) (この著者で検索)Graduate School of Engineering, Nagoya University;Toshiki Yasuno (author) (この著者で検索)Graduate School of Engineering, Nagoya University;Keisuke Atsumi (author) (この著者で検索)Department of Materials Engineering, The University of Tokyo;Shuhong Shuhong Li (author) (この著者で検索)Department of Materials Engineering, The University of Tokyo;Tomonori Nishimura (author) (この著者で検索)Department of Materials Engineering, The University of Tokyo;Kaito Kanahashi (author) (この著者で検索)Department of Materials Engineering, The University of TokyoJun Uzuhashi (author) (この著者で検索)National Institute for Materials Science Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Electron Microscopy Unit
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;Kosuke Nagashio (author) (この著者で検索)Department of Materials Engineering, The University of TokyoYoshiki Sakuma (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Epitaxial Structures Group
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Nobuyuki Ikarashi (author) (この著者で検索)Nagoya University
- キーワード
- MoS2, sapphire
- 刊行年月日
- 2025-12-22
- 更新時刻
- 2025-12-24 17:24:27 +0900
Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 for scalable 2D electronics
- ジャーナル論文
- 著者
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Yoshiki Sakuma (author) (この著者で検索)National Institute for Materials Science
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;Keisuke Atsumi (author) (この著者で検索)Takanobu Hiroto (author) (この著者で検索)National Institute for Materials Science
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Jun Nara (author) (この著者で検索)National Institute for Materials Science
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Akihiro Ohtake (author) (この著者で検索)National Institute for Materials Science
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;Yuki Ono (author) (この著者で検索);Takashi Matsumoto (author) (この著者で検索);Yukihiro Muta (author) (この著者で検索);Kai Takeda (author) (この著者で検索);Emi Kano (author) (この著者で検索);Toshiki Yasuno (author) (この著者で検索);Xu Yang (author) (この著者で検索);Nobuyuki Ikarashi (author) (この著者で検索);Asato Suzuki (author) (この著者で検索);Michio Ikezawa (author) (この著者で検索);Shuhong Li (author) (この著者で検索);Tomonori Nishimura (author) (この著者で検索);Kaito Kanahashi (author) (この著者で検索)Kosuke Nagashio (author) (この著者で検索)
- キーワード
- MoS2, epitaxial growth, MOCVD
- 刊行年月日
- 2026-01-21
- 更新時刻
- 2026-01-29 16:30:04 +0900