HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (−112) β-Ga 2 O 3
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
;
Yuichi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, (−112), HVPE, HCl gas etching
- Date published
- 2026-12-31
- Updated at
- 2026-07-16 10:12:49 +0900
Rapid homoepitaxial growth of (011) β-Ga 2 O 3 by HCl-based halide vapor phase epitaxy
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, HVPE
- Date published
- 2025-12-31
- Updated at
- 2025-11-28 08:30:04 +0900
Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
;Encarnación G. Víllora (author) (Search by this author)Kiyoshi Shimamura (author) (Search by this author)National Institute for Materials Science
- Keyword
- α-Ga2O3, HVPE
- Date published
- 2015-05-01
- Updated at
- 2024-01-22 09:34:09 +0900
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
- Journal article
- Creator
-
Y. Oshima (author) (Search by this author)
;
;K. Kawara (author) (Search by this author);T. Shinohe (author) (Search by this author);T. Hitora (author) (Search by this author);M. Kasu (author) (Search by this author)S. Fujita (author) (Search by this author)
- Keyword
- α-Ga2O3, HVPE, ELO, dislocation
- Date published
- 2019-02-01
- Updated at
- 2024-01-29 16:48:15 +0900
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takayoshi Oshima (author) (Search by this author)
;
Shiyu Xiao (author) (Search by this author)
https://orcid.org/0009-0007-0382-0396
(unauthenticated)
;
;Kazuto Murakami (author) (Search by this author);Katsuhiro Imai (author) (Search by this author)Takahiro Tomita (author) (Search by this author)
- Keyword
- Ga2O3, HVPE, Cr2O3
- Date published
- 2026-02-21
- Updated at
- 2026-02-18 16:30:15 +0900
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
;Katsuaki Kawara (author) (Search by this author);Takayoshi Oshima (author) (Search by this author)Takashi Shinohe (author) (Search by this author)
- Keyword
- κ-Ga2O3, ε-Ga2O3, ELO, domain, HVPE
- Date published
- 2020-11-01
- Updated at
- 2024-01-22 09:39:14 +0900