5 records found. Displaying records 1 to 5.

article-2026-2-16.pdf
Oxygen reduction for p-type TeOx thin-film transistor
Journal article
Creator
ORCID SAMURAI ;
Masayuki Okamura (author) (Search by this author)
MANA, NIMS
ORCID ;
Tomomi Sawada (author) (Search by this author)
MANA, NIMS
ORCID ; ORCID SAMURAI ; ORCID SAMURAI
Keyword
oxide transistor, p-type TFT, TeOx, BEOL compatible, reducing agent, tungsten
Date published
2026-05-25
Updated at
2026-06-09 17:58:56 +0900
1-s2.0-S0040609024003493-main.pdf
Compositional changes between metastable SnO and stable SnO2 in a sputtered film for p-type thin-film transistors
Journal article
Creator
ORCID ;
Toshihide Nabatame (author) (Search by this author)
;
Jong Won Chung (author) (Search by this author)
ORCID ;
Tomomi Sawada (author) (Search by this author)
;
Hiromi Miura (author) (Search by this author)
;
Manami Miyamoto (author) (Search by this author)
;
Kazuhito Tsukagoshi (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI
Keyword
p-type SnO, Thin-film transistors, Sputtering, High vacuum Annealing
Date published
2024-10-09
Updated at
2024-10-15 16:30:30 +0900
Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_085003.pdf
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process
Journal article
Creator
Yoshihiro Irokawa (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI ;
Toshihide Nabatame (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI ;
Tomomi Sawada (author) (Search by this author)
National Institute for Materials Science
;
Manami Miyamoto (author) (Search by this author)
;
Hiromi Miura (author) (Search by this author)
;
Kazuhito Tsukagoshi (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI ;
Yasuo Koide (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI
Keyword
GaN
Date published
2024-08-01
Updated at
2024-09-02 12:30:27 +0900
Nabatame_d-SiO2-Ga2O3 2026_ECS_J._Solid_State_Sci._Technol._15_064005.pdf
Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process
Journal article
Creator
Toshihide Nabatame (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science
ORCID SAMURAI ;
Yoshihiro Irokawa (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
ORCID SAMURAI ;
Tomomi Sawada (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Hiromi Miura (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Manami Miyamoto (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Takashi Onaya (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
ORCID ;
Yasuo Koide (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI ;
Kazuhito Tsukagoshi (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
ORCID SAMURAI
Keyword
Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress
Date published
2026-06-01
Updated at
2026-08-18 11:30:17 +0900
1-s2.0-S1369800125003439-main.pdf
A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures
Journal article
Creator
Masahiro Hara (author) (Search by this author)
ORCID ; ORCID SAMURAI ; ORCID SAMURAI ;
Tomomi Sawada (author) (Search by this author)
;
Manami Miyamoto (author) (Search by this author)
;
Hiromi Miura (author) (Search by this author)
;
Tsunenobu Kimoto (author) (Search by this author)
;
Yasuo Koide (author) (Search by this author)
Keyword
GaN
Date published
2025-05-07
Updated at
2025-05-08 12:30:16 +0900
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