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p-Type tin(II) oxide (SnO (Sn2+)) formation using radiofrequency (RF) reactive magnetron sputtering and post-deposition annealing (PDA) processes was investigated. The as-grown SnOx film deposited from an SnOx (SnO:Sn = 60:40) target by RF sputtering at an oxygen partial pressure (PO2) of 0 Pa consisted of 2% Sn (Sn0), 42% Sn2+, and 56% SnO2 (Sn4+). However, compared with the Sn2+ fraction observed after PDA under N2 and low-vacuum (~1 Pa) conditions, that after PDA at 300 C under high vacuum (< 5 × 10−4 Pa) (HVPDA) increased substantially to greater than 62%. This result was attributed to the transformation from SnO2 to SnO during HVPDA. A staggered bottom-gate TFT with an SnO channel (10 nm), which was fabricated by HVPDA at 300 °C, exhibited p-type properties, including a relatively high on-current/off-current (Ion/Ioff) ratio of 5.1 × 104 and a hole field-effect mobility (μFE) of 1.8 cm2/(V·s).

Rights:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

Keyword: p-type SnO, Thin-film transistors, Sputtering, High vacuum Annealing

Date published: 2024-10-09

Publisher: Elsevier BV

Journal:

• Thin Solid Films (ISSN: 00406090) vol. 807 issue. 30 140548

Funding:

• Samsung Advanced Institute of Technology

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1016/j.tsf.2024.140548

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Updated at: 2024-10-15 16:30:30 +0900

Published on MDR: 2024-10-15 16:30:30 +0900