Compositional changes between metastable SnO and stable SnO2 in a sputtered film for p-type thin-film transistors

Yong-Lie Sun; Toshihide Nabatame; Jong Won Chung; Tomomi Sawada; Hiromi Miura; Manami Miyamoto; Kazuhito Tsukagoshi

doi:10.1016/j.tsf.2024.140548

論文 Compositional changes between metastable SnO and stable SnO2 in a sputtered film for p-type thin-film transistors

Yong-Lie Sun ; Toshihide Nabatame ; Jong Won Chung ; Tomomi Sawada ; Hiromi Miura ; Manami Miyamoto ; Kazuhito Tsukagoshi (National Institute for Materials Science)

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Yong-Lie Sun, Toshihide Nabatame, Jong Won Chung, Tomomi Sawada, Hiromi Miura, Manami Miyamoto, Kazuhito Tsukagoshi. Compositional changes between metastable SnO and stable SnO2 in a sputtered film for p-type thin-film transistors. Thin Solid Films. 2024, 807 (30), 140548. https://doi.org/10.1016/j.tsf.2024.140548

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(abstract)

p-Type tin(II) oxide (SnO (Sn2+)) formation using radiofrequency (RF) reactive magnetron sputtering and post-deposition annealing (PDA) processes was investigated. The as-grown SnOx film deposited from an SnOx (SnO:Sn = 60:40) target by RF sputtering at an oxygen partial pressure (PO2) of 0 Pa consisted of 2% Sn (Sn0), 42% Sn2+, and 56% SnO2 (Sn4+). However, compared with the Sn2+ fraction observed after PDA under N2 and low-vacuum (~1 Pa) conditions, that after PDA at 300 C under high vacuum (< 5 × 10−4 Pa) (HVPDA) increased substantially to greater than 62%. This result was attributed to the transformation from SnO2 to SnO during HVPDA. A staggered bottom-gate TFT with an SnO channel (10 nm), which was fabricated by HVPDA at 300 °C, exhibited p-type properties, including a relatively high on-current/off-current (Ion/Ioff) ratio of 5.1 × 104 and a hole field-effect mobility (μFE) of 1.8 cm2/(V·s).

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