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説明:

We investigated p-type TeOx thin films fabricated by vacuum deposition using a mixture of TeO2 powder and W powder in Al2O3 crucibles and evaluated its thin-film transistor (TFT) characteristics. P-Type TeOx thin films were obtained when W was added at a weight ratio of 15% or more relative to TeO2. However, the films became insulators and exhibited no electrical conductivity when the ratio was 10% or less. X-ray photoelectron spectroscopy analysis revealed that the TeOx thin films contained approximately 5% or more Te–Te bonds. Because W–O bonds exhibit a higher dissociation energy than Te–O bonds, TeO2 was considered to be reduced by W. In addition, W was not present in the film and was used solely for the reduction of TeO2. When a W boat was used as the container for heating the evaporation source, quantitative analysis of the effects of the reduction by W was difficult. Therefore, an Al2O3 crucible, which reacts poorly with TeO2, was used. The results showed that when TeOx TFTs are fabricated by vacuum deposition, the addition of an appropriate amount of reducing agent to the raw material is essential to form an adequate amount of Te–Te bonds.

権利情報:

• In Copyright
  

  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Seiichi Kato, Masayuki Okamura, Tomomi Sawada, Toshihide Nabatame, Kazuhito Tsukagoshi; Oxygen reduction for p-type TeOx thin-film transistor. Appl. Phys. Lett. 25 May 2026; 128 (21): 212109 and may be found at https://doi.org/10.1063/5.0329188.

キーワード: oxide transistor, p-type TFT, TeOx, BEOL compatible, reducing agent, tungsten

刊行年月日: 2026-05-25

出版者: AIP Publishing

掲載誌:

• Applied Physics Letters (ISSN: 00036951) vol. 128 issue. 21 212109

研究助成金:

• KAKENHI 26H0222
• ARIM 25NM5407

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.6329

公開URL: https://doi.org/10.1063/5.0329188

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更新時刻: 2026-06-09 17:58:56 +0900

MDRでの公開時刻: 2026-06-10 11:11:37 +0900