3 records found.
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takayoshi Oshima (author) (Search by this author)
;
Shiyu Xiao (author) (Search by this author)
https://orcid.org/0009-0007-0382-0396
(unauthenticated)
;
;Kazuto Murakami (author) (Search by this author);Katsuhiro Imai (author) (Search by this author)Takahiro Tomita (author) (Search by this author) - Keyword
- Ga2O3, HVPE, Cr2O3
- Date published
- 2026-02-21
- Updated at
- 2026-02-18 16:30:15 +0900
Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
;Encarnación G. Víllora (author) (Search by this author)Kiyoshi Shimamura (author) (Search by this author)
- Keyword
- ScN, HVPE
- Date published
- 2014-04-21
- Updated at
- 2024-01-30 16:35:16 +0900
Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
;Hiroyuki Ando (author) (Search by this author)Takashi Shinohe (author) (Search by this author)
- Keyword
- α-Ga2O3, dislocation, HVPE
- Date published
- 2023-06-01
- Updated at
- 2024-06-23 08:30:11 +0900