Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties
- Journal article
- Creator
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;Yuichi Oshima (author) (Search by this author);Katsuaki Kawara (author) (Search by this author);Takayoshi Oshima (author) (Search by this author);Mitsuru Okigawa (author) (Search by this author)Takashi Shinohe (author) (Search by this author)
- Keyword
- α-Ga2O3, HVPE
- Date published
- 2020-05-01
- Updated at
- 2024-01-22 09:40:57 +0900
Halide Vapor Phase Epitaxy of twin-free a-Ga2O3 on sapphire (0001) substrates
- Journal article
- Creator
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Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
;Encarnación G. Víllora (author) (Search by this author)Kiyoshi Shimamura (author) (Search by this author)National Institute for Materials Science
- Keyword
- α-Ga2O3, HVPE
- Date published
- 2015-05-01
- Updated at
- 2024-01-22 09:34:09 +0900
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along -12-10>
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
;Shingo Yagyu (author) (Search by this author)Takashi Shinohe (author) (Search by this author)
- Keyword
- α-Ga2O3, HVPE, dislocation, ELO
- Date published
- 2021-11-07
- Updated at
- 2024-01-30 16:49:49 +0900