3 件のレコードが見つかりました。
Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor
- ジャーナル論文
- 著者
-
Yosuke Sasama (author) (この著者で検索)
;
Takuya Iwasaki (author) (この著者で検索)
;
Masataka Imura (author) (この著者で検索)
;
Kenji Watanabe (author) (この著者で検索)
;
Takashi Taniguchi (author) (この著者で検索)
;
Yamaguchi Takahide (author) (この著者で検索)
- キーワード
- diamond, field-effect transistors, hexagonal boron nitride
- 刊行年月日
- 2025-10-06
- 更新時刻
- 2025-10-21 16:06:02 +0900
Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator
- ジャーナル論文
- 著者
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Yosuke Sasama (author) (この著者で検索)
;
Takuya Iwasaki (author) (この著者で検索)
;
Mohammad Monish (author) (この著者で検索)
;
Kenji Watanabe (author) (この著者で検索)
;
Takashi Taniguchi (author) (この著者で検索)
;
Yamaguchi Takahide (author) (この著者で検索)
- キーワード
- Hydrogen-terminated diamond, Field-effect transistors, hexagonal boron nitride, Self-aligned gate electrode
- 刊行年月日
- 2024-08-26
- 更新時刻
- 2024-09-12 16:30:45 +0900
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
- ジャーナル論文
- 著者
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Takuya Iwasaki (author) (この著者で検索)National Institute for Materials Science
;
;Yoshifumi Morita (author) (この著者で検索)Kenji Watanabe (author) (この著者で検索)National Institute for Materials Science
;
Takashi Taniguchi (author) (この著者で検索)National Institute for Materials Science
- キーワード
- bilayer graphene, hexagonal boron nitride, heterostructure, valley Hall effect
- 刊行年月日
- 2024-02-08
- 更新時刻
- 2025-01-10 16:31:45 +0900