3 件のレコードが見つかりました。
HCl-gas etching of (001) β-Ga2O3 under oxygen supply
- ジャーナル論文
- 著者
-
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
;
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
- キーワード
- Ga2O3, etching, plasma-free
- 刊行年月日
- 2025-12-31
- 更新時刻
- 2025-09-04 12:30:19 +0900
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
;
Masataka Imura (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
- キーワード
- GaN, AlInN, etching, positive bevel edge termination
- 刊行年月日
- 2024-08-01
- 更新時刻
- 2024-08-02 12:30:52 +0900