ライセンス: Creative Commons BY Attribution 4.0 International キーワード: Ga2O3
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11 件のレコードが見つかりました。 1件目から10件目まで表示します。

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J_Appl_Phys_139_075302_(2026).pdf
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
ジャーナル論文
著者
ORCID SAMURAI ; ORCID SAMURAI ;
Shiyu Xiao (author) (この著者で検索)
ORCID ;
Kazuto Murakami (author) (この著者で検索)
;
Katsuhiro Imai (author) (この著者で検索)
;
Takahiro Tomita (author) (この著者で検索)
キーワード
Ga2O3, HVPE, Cr2O3
刊行年月日
2026-02-21
更新時刻
2026-02-18 16:30:15 +0900
Physica Status Solidi b - 2025 - Penman - Comparative Study of the Optical Properties of ‐ ‐ and ‐Ga2O3.pdf
Comparative Study of the Optical Properties of α‐, β‐, and κ‐Ga2O3
ジャーナル論文
著者
Lewis T. Penman (author) (この著者で検索)
ORCID ;
Zak M. Johnston (author) (この著者で検索)
;
Paul R. Edwards (author) (この著者で検索)
ORCID ; ORCID SAMURAI ;
Clifford McAleese (author) (この著者で検索)
;
Piero Mazzolini (author) (この著者で検索)
ORCID ;
Matteo Bosi (author) (この著者で検索)
ORCID ;
Luca Seravalli (author) (この著者で検索)
ORCID ;
Roberto Fornari (author) (この著者で検索)
;
Robert W. Martin (author) (この著者で検索)
ORCID ;
Fabien C.‐P. Massabuau (author) (この著者で検索)
ORCID
キーワード
Ga2O3
刊行年月日
2025-02-12
更新時刻
2025-08-18 16:30:52 +0900
band_pdos.png
First-principles lattice thermal conductivity calculation for Ga2O3 / C2/m (12) / materials id 886
データセット
コレクション
MDR lattice thermal conductivity calculation database
著者
Atsushi Togo (author) (この著者で検索)
National Institute for Materials Science Center for Basic Research on Materials
ORCID SAMURAI
キーワード
Lattice thermal conductivity, Ga2O3
刊行年月日
更新時刻
2026-01-24 14:36:41 +0900
band_pdos.png
First-principles lattice thermal conductivity calculation for Ga2O3 / R-3c (167) / materials id 1243
データセット
コレクション
MDR lattice thermal conductivity calculation database
著者
Atsushi Togo (author) (この著者で検索)
National Institute for Materials Science Center for Basic Research on Materials
ORCID SAMURAI
キーワード
Lattice thermal conductivity, Ga2O3
刊行年月日
更新時刻
2026-01-24 12:32:36 +0900
Plasma-free anisotropic selective-area etching of -Ga2O3 using forming gas under atmospheric pressure_organized.pdf
Plasma-free anisotropic selective-area etching of β-Ga 2 O 3 using forming gas under atmospheric pressure
ジャーナル論文
著者
ORCID SAMURAI ;
Rie Togashi (author) (この著者で検索)
ORCID ; ORCID SAMURAI
キーワード
Ga2O3, forming gas, anisotropic etching, plasma-free process
刊行年月日
2024-12-31
更新時刻
2024-07-31 12:30:20 +0900
Oshima_2025_Appl._Phys._Express_18_116501-1.pdf
Fabrication of β -Ga 2 O 3 /air-gap structures on (010) β -Ga 2 O 3 by wet etching in tetramethylammonium hydroxide (TMAH)
ジャーナル論文
著者
ORCID SAMURAI
キーワード
Ga2O3, TMAH, wet etching, MEMS
刊行年月日
2025-11-01
更新時刻
2025-11-27 08:30:13 +0900
article.pdf
Tetramethylammonium hydroxide (TMAH) treatment of dry-etched trenches on (010) β-Ga2O3 to enhance trench profiles
ジャーナル論文
著者
ORCID SAMURAI
キーワード
Ga2O3, TMAH
刊行年月日
2026-02-01
更新時刻
2026-02-25 12:30:03 +0900
055207_1_5.0260753-2-8.pdf
Fabrication of air bridges on (100) β-Ga2O3 using crystallographic HCl gas etching
ジャーナル論文
著者
ORCID SAMURAI ; ORCID SAMURAI
キーワード
Ga2O3, HCl gas etching, air bridge
刊行年月日
2025-05-01
更新時刻
2025-05-07 12:30:22 +0900
Nabatame_d-SiO2-Ga2O3 2026_ECS_J._Solid_State_Sci._Technol._15_064005.pdf
Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process
ジャーナル論文
著者
Toshihide Nabatame (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)
ORCID SAMURAI ;
Yoshihiro Irokawa (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID SAMURAI ;
Tomomi Sawada (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
;
Hiromi Miura (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
;
Manami Miyamoto (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
;
Takashi Onaya (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
ORCID ;
Yasuo Koide (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI ;
Kazuhito Tsukagoshi (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
ORCID SAMURAI
キーワード
Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress
刊行年月日
2026-06-01
更新時刻
2026-08-18 11:30:17 +0900
Rapid homoepitaxial growth of 011 -Ga2O3 by HCl-based halide vapor phase epitaxy.pdf
Rapid homoepitaxial growth of (011) β-Ga 2 O 3 by HCl-based halide vapor phase epitaxy
ジャーナル論文
著者
ORCID SAMURAI ; ORCID SAMURAI
キーワード
Ga2O3, HVPE
刊行年月日
2025-12-31
更新時刻
2025-11-28 08:30:04 +0900
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